| Topologie | Abwärtswandler |
| Eingangsspannung | 5 V |
| Schaltfrequenz | 1950-2550 kHz |
| Ausgang 1 | 1.1 V |
| IC-Revision | E1 |
This reference design showcases various power architectures for generating multiple voltage rails for an application processor module, requiring >1A load current and high efficiency . The required power supply is generated using 5-, 12- or 24-V DC input from the backplane. Power supplies are generated using DC-DC converters with an integrated FET and a power module with an integrated inductor for size. The design features a HotRod™ package type for applications requiring low EMI. It is also optimal for design time constrained applications. Additional features include DDR termination regulator, input supply OR-ing, voltage sequencing, eFuse for overload protection, and voltage and load current monitoring. This design can be used with a processor, digital signal processor and field-programmable gate array. It has been tested for radiated emission, per CISPR22 meeting class A and B requirements.
Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | λDom typ.(nm) | Emittierte Farbe | λPeak typ.(nm) | IV typ.(mcd) | VF typ.(V) | Chiptechnologie | 2θ50% typ.(°) | L(µH) | IRP,40K(A) | ISAT,10%(A) | ISAT,30%(A) | RDC max.(mΩ) | fres(MHz) | Montageart | Muster | |
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![]() | WE-LHMI SMT Speicherdrossel, –, – | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-LHMI SMT Speicherdrossel | – | – | – | – | – | – | – | Induktivität1.5 µH | Performance Nennstrom4.9 A | Sättigungsstrom 15.65 A | Sättigungsstrom @ 30%10.1 A | Gleichstromwiderstand42 mΩ | Eigenresonanzfrequenz64 MHz | MontageartSMT |