IC-Hersteller (103)
- Alle Hersteller
Analog Devices
Infineon Technologies
Microchip
Onsemi
Renesas
ROHM
STMicroelectronics
Texas Instruments
- 3peak incorporated (28)
- Ablic (23)
- Acco Semiconductor (1)
- Advanced Power (4)
- Allegro Microsystems (100)
- Alpha & Omega Semiconductor (37)
- AnalogySemi (3)
- AnDAPT Inc (204)
- Anpec (13)
- AXElite (2)
- Backward (6)
- Bright Power Semiconductor (1)
- Broadcom (46)
- Cambridge GaN Devices (18)
- Chipanalog Micro (10)
- Cologne Chips (1)
- Convenient Power (1)
- Dialog Semiconductor (12)
- Diodes Incorporated (259)
- Divimath (8)
- Elmos AG (1)
- EPC (140)
- e-Peas Semiconductors (1)
- Eta Solutions Co. Ltd. (9)
- GaN Systems (8)
- GaNPower (3)
- Giantec (1)
- Gstek Wuxi (1)
- Helix Semiconductor (7)
- IKON (1)
- Indie Semiconductor (8)
- Innovision Semiconductor Inc (2)
- Intel (68)
- Inventchip Technology (3)
- ISSI (51)
- JoulWatt (20)
- KDPOF (3)
- Kinetic Technology (8)
- Lattice semiconductor Corporation (38)
- Littelfuse (1)
- Lumissil Microsystems (8)
- M3 Technology (M3Tek) (7)
- Macnica (22)
- Marvell Semiconductor (1)
- MaxLinear (181)
- Menlo Micro (1)
- MikroE (25)
- MindCet (2)
- Monolithic Power Systems (980)
- Navitas Semiconductor Inc (6)
- NewEdge Technologies, Inc. (1)
- Nexperia (267)
- Nisshinbo Micro Device Inc. (10)
- Novosense Micro (1)
- NXP (335)
- O2 Micro International Ltd (10)
- On Bright (7)
- Panasonic (2)
- PN Junction Semiconductor (2)
- Power Integrations (117)
- Powermat (1)
- Pulsiv (19)
- Qorvo (96)
- Realsil SuRealsil(tek) Microelectronics (1)
- Richtek (297)
- Sanken Electric Co., Ltd. (16)
- Sckipio (6)
- Semtech (86)
- SG-Micro (57)
- SiFive (2)
- Silanna Semiconductor (9)
- Silergy Corporation (33)
- Silicon Laboratory Inc. (108)
- Silicontent Technology (59)
- Silvertel (59)
- Skycore Semiconductors (1)
- Skyworks (33)
- Southchip (14)
- Summit Wireless (1)
- Tagore Tech (7)
- Taiwan Semiconductor (1)
- TDK Corporation (1)
- Tempo Semiconductor (1)
- Torex (37)
- Toshiba (25)
- Transphorm (21)
- TransSIP (2)
- Union (21)
- uPI Semiconductor (2)
- Valens Semiconductor (31)
- Wise Integration (3)
- Wolfspeed (23)
- Xilinx (22)
- XL Semiconductor (3)
- XYSemi (62)
Texas Instruments TPS62730 | Demoboard TIDA-00646
Step Down Converter with Bypass Mode for Ultra Low Power Wireless Applications
Details
| Topologie | Abwärtswandler |
| Eingangsspannung | 1.9-3.9 V |
| Schaltfrequenz | 3000 kHz |
| Ausgang 1 | 2.3 V / 0.1 A |
| IC-Revision | 1.0 |
Beschreibung
The TPS62730 is a high frequency synchronous step down DC-DC converter optimized for ultra low power wireless applications. The device is optimized to supply TI's Low Power Wireless sub 1GHz and 2.4GHz RF transceivers and System-On-Chip- solutions. The TPS62730 reduces the current consumption drawn from the battery during TX and RX mode by a high efficient stepdown voltage conversion. It provides up to 100mA output current and allows the use of tiny and low cost chip inductors and capacitors. With an input voltage range of 1.9V to 3.9V the device supports Li-primary batterychemistries such as Li-SOCl2, Li-SO2, Li-MnO2 and also two cell alkaline batteries.
The TPS62730 features an Ultra Low Power bypass mode with typical 30nA current consumption to support sleep and low power modes of TI's CC2540Bluetooth Low Energy and CC430 System-On-Chip solutions. In this bypass mode, the output capacitor of the DC/DC converter is connected via anintegrated typ. 2.1Ω Bypass switch to the battery.
In DC/DC operation mode the device provides a fixed output voltage to the system. With a switch frequency up to 3MHz, the TPS62730 features low output ripple voltage and low noise even with a small 2.2uF output capacitor. The automatic transition into bypass mode during DC/DC operation prevents an increase of output ripple voltage and noise once the DC/DC converter operates close to 100% duty cycle. The device automatically enters bypass mode once the battery voltage falls below the transition threshold VIT BYP . The TPS62730 is available in a 1 × 1.5mm2 6 pin QFN package.
Eigenschaften
- Input Voltage Range VIN from 1.9V to 3.9V
- Typ. 30 nA Ultra Low Power Bypass Mode
- Typ. 25 μA DC/DC Quiescent Current
- Internal Feedback Divider Disconnect
- Typ. 2.1Ω Bypass Switch between VIN and VOUT
- Automatic Transition from DC/DC to Bypass Mode
- Up To 3MHz switch frequency
- Up to 95% DC/DC Efficiency
- Open Drain Status Output STAT
- Output Peak Current up to 100mA
- Fixed Output Voltages 1.9V, 2.05V, 2.1V, 2.3V
- Small External OutputFilterComponents 2.2μH/ 2.2μF
- Optimized For Low Output Ripple Voltage
- Small 1 × 1.5 × 0.6mm3 SON Package
- 12 mm2 Minimum Solution Size
Typische Anwendungen
- CC2540 Bluetooth™ Low Energy
- RF4CE, Metering
- Low Power Wireless Applications
Weiterführende Informationen
Artikeldaten
Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | C | Tol. C | VR(V (DC)) | Bauform | Betriebstemperatur | Q(%) | DF(%) | RISO | Keramiktyp | L(mm) | B(mm) | H(mm) | Fl(mm) | Verpackung | L(µH) | IR 1(mA) | IR 2(mA) | ISAT(mA) | RDC(mΩ) | fres(MHz) | Typ | Endurance(h) | IRIPPLE(mA) | ILeak(µA) | Raster(mm) | Ø D(mm) | Pins | Montageart | IR(A) | Arbeitsspannung(V (AC)) | Muster | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| WCAP-CSGP MLCCs 6.3 V(DC), 2.2 µF, ±20% | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWCAP-CSGP MLCCs 6.3 V(DC) | Kapazität2.2 µF | Kapazität±20% | Nennspannung6.3 V (DC) | Bauform0402 | Betriebstemperatur -55 °C up to +85 °C | – | Verlustfaktor20 % | Isolationswiderstand0.02 GΩ | KeramiktypX5R Klasse II | Länge1 mm | Breite0.5 mm | Höhe0.5 mm | Pad Dimension0.25 mm | Verpackung7" Tape & Reel | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | |||||
 | WCAP-ATLI Aluminium-Elektrolytkondensatoren, 1200 µF, ±20% | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWCAP-ATLI Aluminium-Elektrolytkondensatoren | Kapazität1200 µF | Kapazität±20% | Nennspannung10 V (DC) | – | – | – | Verlustfaktor14 % | – | – | Länge20 mm | – | – | – | VerpackungAmmopack | – | – | – | – | – | – | – | Endurance 5000 | Rippelstrom1560 mA | Leckstrom120 µA | Raster5 mm | Durchmesser10 mm | – | – | – | – | ||||
 | WE-PMI Power-Multilayer-Induktivität, –, – | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-PMI Power-Multilayer-Induktivität | – | – | – | Bauform0805 | Betriebstemperatur -40 °C up to +125 °C | Güte23 % | – | – | – | Länge2 mm | Breite1.2 mm | Höhe1 mm | – | – | Induktivität2.2 µH | Nennstrom 1700 mA | Nennstrom 21000 mA | Sättigungsstrom700 mA | Gleichstromwiderstand200 mΩ | Eigenresonanzfrequenz50 MHz | TypLow RDC | – | – | – | – | – | Pins2 | MontageartSMT | – | – | ||||
 | WR-PHD Stiftleisten - Einreihig, –, – | Simulation– | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWR-PHD Stiftleisten - Einreihig | – | – | – | – | Betriebstemperatur -40 °C up to +105 °C | – | – | Isolationswiderstand1000 MΩ | – | Länge5.08 mm | – | – | – | VerpackungBeutel | – | – | – | – | – | – | TypGerade | – | – | – | Raster2.54 mm | – | Pins2 | MontageartTHT | Nennstrom3 A | Arbeitsspannung250 V (AC) |