IC-Hersteller (103)
- Alle Hersteller
Analog Devices
Infineon Technologies
Microchip
Onsemi
Renesas
ROHM
STMicroelectronics
Texas Instruments
- 3peak incorporated (28)
- Ablic (23)
- Acco Semiconductor (1)
- Advanced Power (4)
- Allegro Microsystems (100)
- Alpha & Omega Semiconductor (37)
- AnalogySemi (3)
- AnDAPT Inc (204)
- Anpec (13)
- AXElite (2)
- Backward (6)
- Bright Power Semiconductor (1)
- Broadcom (46)
- Cambridge GaN Devices (18)
- Chipanalog Micro (10)
- Cologne Chips (1)
- Convenient Power (1)
- Dialog Semiconductor (12)
- Diodes Incorporated (259)
- Divimath (8)
- Elmos AG (1)
- EPC (140)
- e-Peas Semiconductors (1)
- Eta Solutions Co. Ltd. (9)
- GaN Systems (8)
- GaNPower (3)
- Giantec (1)
- Gstek Wuxi (1)
- Helix Semiconductor (7)
- IKON (1)
- Indie Semiconductor (8)
- Innovision Semiconductor Inc (2)
- Intel (68)
- Inventchip Technology (3)
- ISSI (51)
- JoulWatt (20)
- KDPOF (3)
- Kinetic Technology (8)
- Lattice semiconductor Corporation (38)
- Littelfuse (1)
- Lumissil Microsystems (8)
- M3 Technology (M3Tek) (7)
- Macnica (22)
- Marvell Semiconductor (1)
- MaxLinear (181)
- Menlo Micro (1)
- MikroE (25)
- MindCet (2)
- Monolithic Power Systems (980)
- Navitas Semiconductor Inc (6)
- NewEdge Technologies, Inc. (1)
- Nexperia (267)
- Nisshinbo Micro Device Inc. (10)
- Novosense Micro (1)
- NXP (335)
- O2 Micro International Ltd (10)
- On Bright (7)
- Panasonic (2)
- PN Junction Semiconductor (2)
- Power Integrations (117)
- Powermat (1)
- Pulsiv (19)
- Qorvo (96)
- Realsil SuRealsil(tek) Microelectronics (1)
- Richtek (297)
- Sanken Electric Co., Ltd. (16)
- Sckipio (6)
- Semtech (86)
- SG-Micro (57)
- SiFive (2)
- Silanna Semiconductor (9)
- Silergy Corporation (33)
- Silicon Laboratory Inc. (108)
- Silicontent Technology (59)
- Silvertel (59)
- Skycore Semiconductors (1)
- Skyworks (33)
- Southchip (14)
- Summit Wireless (1)
- Tagore Tech (7)
- Taiwan Semiconductor (1)
- TDK Corporation (1)
- Tempo Semiconductor (1)
- Torex (37)
- Toshiba (25)
- Transphorm (21)
- TransSIP (2)
- Union (21)
- uPI Semiconductor (2)
- Valens Semiconductor (31)
- Wise Integration (3)
- Wolfspeed (23)
- Xilinx (22)
- XL Semiconductor (3)
- XYSemi (62)
Texas Instruments TPS62163 | Demoboard PMP20289
400V – 12V/500W High Frequency Resonant Converter Reference Design Using High Voltage GaN Devices
Details
| Topologie | LLC Resonanzwandler |
| Eingangsspannung | 200-400 V |
| Ausgang 1 | 5 V |
| IC-Revision | A |
Beschreibung
The PMP20289 was built and tested to verify the performance of a high frequency (>400kHz nominal switching frequency) LLC series resonant converter (LLC-SRC) implemented with Texas Instrument’s high voltage GaN FETs under nominal (390V to 12V) voltage conversion. The digital controller UCD3138A is used along with the UCD7138 SR controller to optimize LLC-SRC efficiency. TI’s high voltage direct drive GaNFET LMG3410 is used to enable fast switching and be able to minimize dead-time between half-bridge switches. The test results show that 96.8% peak efficiency is achieved at 24A load and 96.3% efficiency is achieved at 42A full load with a switching frequency over 350kHz in a 390V to 12V conversion.
Eigenschaften
400V – 12V/500W high frequency LLC series resonant converter350kHz resonant frequency and 500kHz switching frequency at 400V to 12V conversionUtilize TI high voltage direct drive GaN FETs as input switchesOptimized LLC SR conduction with UCD7138/UCD3138AAchieve peak 96.8% efficiencyREMARK: BOM ADDED WITH SCHEMATIC PDF
Weiterführende Informationen
Artikeldaten
Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | C | Tol. C | VR(V (DC)) | Bauform | Betriebstemperatur | DF(%) | RISO | Keramiktyp | L(mm) | B(mm) | H(mm) | Fl(mm) | Verpackung | L(µH) | IR(A) | ISAT(A) | fres(MHz) | Montageart | Muster | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| WCAP-CSGP MLCCs 10 V(DC), 10 µF, ±10% | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWCAP-CSGP MLCCs 10 V(DC) | Kapazität10 µF | Kapazität±10% | Nennspannung10 V (DC) | Bauform0805 | Betriebstemperatur -55 °C up to +125 °C | Verlustfaktor10 % | Isolationswiderstand0.01 GΩ | KeramiktypX7R Klasse II | Länge2 mm | Breite1.25 mm | Höhe1.25 mm | Pad Dimension0.5 mm | Verpackung7" Tape & Reel | – | – | – | – | – | |||||
 | WE-TPC SMT-Speicherdrossel, –, – | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-TPC SMT-Speicherdrossel | – | – | – | Bauform2828 | Betriebstemperatur -40 °C up to +125 °C | – | – | – | Länge2.8 mm | Breite2.8 mm | Höhe2.8 mm | – | – | Induktivität2.2 µH | Nennstrom1.8 A | Sättigungsstrom2.4 A | Eigenresonanzfrequenz130 MHz | MontageartSMT |