| Topologie | Abwärtswandler |
| Eingangsspannung | 5 V |
| Ausgang 1 | 1.8 V / 2 A |
| IC-Revision | E1 |
This reference design showcases various power architectures for generating multiple voltage rails for an application processor module, requiring >1A load current and high efficiency . The required power supply is generated using 5-, 12- or 24-V DC input from the backplane. Power supplies are generated using DC-DC converters with an integrated FET and a power module with an integrated inductor for size. The design features a HotRod™ package type for applications requiring low EMI. It is also optimal for design time constrained applications. Additional features include DDR termination regulator, input supply OR-ing, voltage sequencing, eFuse for overload protection, and voltage and load current monitoring. This design can be used with a processor, digital signal processor and field-programmable gate array. It has been tested for radiated emission, per CISPR22 meeting class A and B requirements.
Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | L(µH) | IR(A) | IRP,40K(A) | ISAT(A) | ISAT,10%(A) | ISAT,30%(A) | RDC max.(Ω) | fres(MHz) | Muster | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() | WE-PD2 SMT-Speicherdrossel, 1 µH, 4 A | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-PD2 SMT-Speicherdrossel | Induktivität1 µH | Nennstrom4 A | Performance Nennstrom5.55 A | Sättigungsstrom5.72 A | Sättigungsstrom 15.72 A | Sättigungsstrom @ 30%6.6 A | Gleichstromwiderstand0.049 Ω | Eigenresonanzfrequenz110 MHz |