IC-Hersteller Texas Instruments

IC-Hersteller (103)

Texas Instruments TPS613222A

TPS61322xx 6.5-μA Quiescent Current, 1.8-A Switch Current Boost Converter

Details

TopologieAufwärtswandler
Eingangsspannung0.9-5.5 V
Ausgang 15.5 V / 1.2 A
IC-RevisionREVISED JANUARY 2018

Beschreibung

The TPS61322xx is a synchronous boost converterwith only 6.5-μA quiescent current. The TPS61322xxprovides a power-supply solution for productspowered by alkaline battery, NiMH rechargeablebattery, or one-cell Li-ion battery. The boost converteris based on a hysteretic control topology usingsynchronous rectification to obtain maximumefficiency at minimal quiescent current. TheTPS61322xx also allows the use of small externalinductor and capacitors. Higher than 90% efficiency isachieved at 10mA load from 1.5-V input to 2.2-Voutput conversion.The TPS61322xx can also support high outputcurrent applications with an external schottky diode.The TPS613222A provides higher than 500 mAoutput current capability at 3.0 V input voltage to 5.0V output voltage conversion with an external schottkydiode in parallel with the internal rectifier FET.The output voltage is set internally to a fixed outputvoltage from 1.8 V to 5.5 V in increment of 0.1 V.Thus it only needs two external components to getthe desired output voltage. The TPS61322xx alsoimplements thermal shutdown protection function.The TPS61322xx is available in a 2.9-mm × 1.3-mm3-pin SOT package or a 2.9-mm × 1.6-mm 5-pin SOTpackage.

Eigenschaften

  • Operating Input Voltage Range: 0.9 V to 5.5 V
  • Output Voltage Range: 1.8 V to 5.5 V
  • 6.5-μA Quiescent Current into VOUT Pin
  • ±3% Output Voltage Accuracy over Temperature
  • Minimum Switch Peak Current Limit:– 0.42 A for TPS613223A– 0.5 A for TPS61322– 0.6 A for TPS613221A and TPS613226A– 1.2 A for TPS613222A
  • Higher than 90% Efficiency at 10 mA Load from 1.5-V to 2.2-V Conversion
  • Thermal Shutdown Protection
  • 2.9-mm x 1.3-mm 3-pin SOT Package and 2.9-mm x 1.6-mm 5-pin SOT Package

Typische Anwendungen

  • Medical Equipment
  • Portable Personal Electronics
  • 1-cell to 3-cell Alkaline or NiMH Battery Powered Applications
  • Gaming Control
  • Tablet

Weiterführende Informationen

Artikeldaten

Artikel Nr.
Daten­blatt
Simu­lation
Downloads
Status
Produktserie
L(µH)
IRP,40K(A)
ISAT,30%(A)
RDC typ.(mΩ)
fres(MHz)
VOP(V)
Montageart
Muster
WE-MAPI SMT-Speicherdrossel, 2.2 µH, 3 A
Simu­lation
Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre.
Induktivität2.2 µH
Performance Nennstrom3 A
Sättigungsstrom @ 30%4.2 A
Gleichstromwiderstand94 mΩ
Eigenresonanzfrequenz45 MHz
Betriebsspannung80 V
MontageartSMT 
WE-MAPI SMT-Speicherdrossel, 4.7 µH, 2.4 A
Simu­lation
Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre.
Induktivität4.7 µH
Performance Nennstrom2.4 A
Sättigungsstrom @ 30%3.7 A
Gleichstromwiderstand141 mΩ
Eigenresonanzfrequenz30 MHz
Betriebsspannung80 V
MontageartSMT 
WE-MAPI SMT-Speicherdrossel, 10 µH, 1.25 A
Simu­lation
Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre.
Induktivität10 µH
Performance Nennstrom1.25 A
Sättigungsstrom @ 30%2.75 A
Gleichstromwiderstand446 mΩ
Eigenresonanzfrequenz21 MHz
Betriebsspannung80 V
MontageartSMT