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Texas Instruments TPS25923 | Demoboard TIDA03030

USB Type-C™ Power Path Protection With Audio Accessory Support Reference Design

Details

TopologieSonstige Topologie

Beschreibung

The TIDA-03030 reference design provides a robust protection solution for the power path in USB Type-C™ applications. The design protects the power path from overvoltage, overcurrent, hot-plug, and reverse-current events by leveraging the TPS25923 (eFuse) and CSD17571Q2 (reverse-blocking FET). The system solution emulates a downstream facing port (DFP) and is able to detect the connection of an upstream facing port (UFP) device. The TIDA-03030 reference design also supports analog audio for USB Type-C audio accessories. The flexible VBUS protection with audio accessory functionality is achievable within a 20 mm x 20 mm, four-layer, single-sided solution.

Eigenschaften

REMARK :BOM IS ADDED WITH PDF

Reverse current blocking and overvoltage protection up 30 VOvercurrent events and short-circuit protectionDetermines UFP connection, audio accessory, port attachment, and cable orientationAutomatically switches between analog audio and USB data linesRoutes MIC and GND signals automatically

Typische Anwendungen

  • Notebook , Ultrabook™,Desktop PC , Tablet

Weiterführende Informationen

Artikeldaten

Artikel Nr.
Daten­blatt
Simu­lation
Downloads
Status
Produktserie
λDom typ.(nm)
Emittierte Farbe
λPeak typ.(nm)
IV typ.(mcd)
VF typ.(V)
Chiptechnologie
50% typ.(°)
Muster
WL-SMCW SMT Mono-color Chip LED Waterclear, 470 nm, Blau
Simu­lation
Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre.
dominante Wellenlänge [typ.]470 nm
Emittierte FarbeBlau 
Spitzen-Wellenlänge [typ.]465 nm
Lichtstärke [typ.]145 mcd
Durchlassspannung [typ.]3.2 V
ChiptechnologieInGaN 
Abstrahlwinkel Phi 0° [typ.]140 °
WL-SMCW SMT Mono-color Chip LED Waterclear, 525 nm, Grün
Simu­lation
Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre.
dominante Wellenlänge [typ.]525 nm
Emittierte FarbeGrün 
Spitzen-Wellenlänge [typ.]515 nm
Lichtstärke [typ.]430 mcd
Durchlassspannung [typ.]3.2 V
ChiptechnologieInGaN 
Abstrahlwinkel Phi 0° [typ.]140 °