| Topologie | Abwärtswandler |
| Eingangsspannung | 0-57 V |
| Schaltfrequenz | 226-276 kHz |
| Ausgang 1 | 5 V / 4.5 A |
| IC-Revision | C |
The TPS23751 is a 16-pin integrated circuit that combines a Power-over-Ethernet (PoE) powered device (PD) interface and a current-mode DC-DC controller optimized specifically for applications requiring high efficiency over a wide load range.
The PoE interface implements type-2 hardware classification per IEEE 802.3at. It also includes an auxiliary power detect (APD) input and a disable function (DEN). A 0.5 Ω, 100 V pass MOSFET minimizes heat dissipation and maximizes power utilization.
The DC-DC controller features internal soft-start, a bootstrap startup current source, current-mode control with slope compensation, blanking, and current limiting. Efficiency is enhanced at light loads by disabling synchronous rectification and entering variable frequency operation (VFO).
The TPS23752 is a 20-pin extended version of the TPS23751 with the addition of a Sleep Mode feature. Sleep Mode disables the converter to minimize power consumption while still generating the Maintain Power Signature (MPS) required by IEEE802.3at.
–40°C to 125°C Junction
Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | L(nH) | IR(A) | ISAT(A) | fres(MHz) | Montageart | LR(nH) | ISAT,10%(A) | ISAT,30%(A) | RDC(mΩ) | Material | Muster | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() | WE-HCM SMT-Hochstrominduktivität, 330 nH, 26 A | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-HCM SMT-Hochstrominduktivität | Induktivität330 nH | Nennstrom26 A | – | Eigenresonanzfrequenz22 MHz | MontageartSMT | Nenninduktivität270 nH | Sättigungsstrom 123.6 A | Sättigungsstrom @ 30%27.7 A | Gleichstromwiderstand0.155 mΩ | MaterialMnZn | ||||
![]() | WE-TPC SMT-Speicherdrossel, 3300 nH, 2.55 A | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-TPC SMT-Speicherdrossel | Induktivität3300 nH | Nennstrom2.55 A | Sättigungsstrom2.3 A | Eigenresonanzfrequenz40 MHz | MontageartSMT | – | – | – | – | – |