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Texas Instruments TLV70433DBVT | Demoboard TIDA-01606 HV Card
10kW 3-Phase 3-Level Grid Tie Inverter Reference Design for Solar String Inverter
Details
| Topologie | Sonstige Topologie |
| IC-Revision | E4 |
Beschreibung
This verified reference design provides an overview on how to implement a three-level three-phase SiC based DC:AC grid-tie inverter stage.Higher switching frequency of 50KHz reduces the size of magnetics for the filter design and enables higher power density. The use of SiC MOSFETs with switching loss ensures higher DC bus voltages of up to 1000V and lower switching losses with a peak efficiency of 99 percent. This design is configurable to work as a two-level or three-level inverter.The system is controlled by a single C2000 microcontroller (MCU), TMS320F28379D, which generates PWM waveforms for all power electronic switching devices under all operating modes.
Eigenschaften
- Rated Nominal and Max Input Voltage at 800-V and 1000-V DC
- Max 10-kW/10-kVA Output Power at 400-V AC 50- or 60-Hz Grid-Tie Connection
- Operating Power Factor Range From 0.7 Lag to 0.7 Lead
- High-Voltage (1200-V) SiC MOSFET-Based FullBridge Inverter for Peak Efficiency of 98.5%
- Compact Output Filter by Switching Inverter at 50 kHz
- <2% Output Current THD at Full Load
- Isolated Driver ISO5852S With Reinforced Isolation for Driving High-Voltage SiC MOSFET and UCC5320S for Driving Middle Si IGBT
- Isolated Current Sensing Using AMC1301 for Load Current Monitoring
- TMS320F28379D Control Card for Digital Control
Typische Anwendungen
- E-Meters
- Ultralow Power Microcontrollers
Weiterführende Informationen
Artikeldaten
Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | λDom typ.(nm) | Emittierte Farbe | λPeak typ.(nm) | IV typ.(mcd) | VF typ.(V) | Chiptechnologie | 2θ50% typ.(°) | C | Tol. C | VR(V (DC)) | Bauform | Betriebstemperatur | DF(%) | RISO | Keramiktyp | L(mm) | B(mm) | H(mm) | Fl(mm) | Verpackung | Z @ 100 MHz(Ω) | Zmax(Ω) | Testbedingung Zmax | IR 2(mA) | RDC max.(Ω) | Typ | Muster | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | WL-SMCD SMT Mono-color Chip LED Diffused, 573 nm, Hellgrün | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWL-SMCD SMT Mono-color Chip LED Diffused | dominante Wellenlänge [typ.]573 nm | Emittierte FarbeHellgrün | Spitzen-Wellenlänge [typ.]575 nm | Lichtstärke [typ.]60 mcd | Durchlassspannung [typ.]2 V | ChiptechnologieAlInGaP | Abstrahlwinkel Phi 0° [typ.]140 ° | – | – | – | Bauform0603 | Betriebstemperatur -40 °C up to +85 °C | – | – | – | Länge1.6 mm | Breite0.8 mm | Höhe0.4 mm | – | VerpackungTape and Reel | – | – | – | – | – | – | ||||
 | WE-CBF SMT-Ferrit, –, – | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-CBF SMT-Ferrit | – | – | – | – | – | – | – | – | – | – | Bauform0603 | Betriebstemperatur -55 °C up to +125 °C | – | – | – | Länge1.6 mm | Breite0.8 mm | Höhe0.8 mm | Pad Dimension0.3 mm | – | Impedanz @ 100 MHz1000 Ω | Maximale Impedanz1050 Ω | Maximale Impedanz120 MHz | Nennstrom 2830 mA | Gleichstromwiderstand0.3 Ω | TypBreitband | ||||
| WCAP-CSGP MLCCs 50 V(DC), –, – | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWCAP-CSGP MLCCs 50 V(DC) | – | – | – | – | – | – | – | Kapazität100 nF | Kapazität±10% | Nennspannung50 V (DC) | Bauform0603 | Betriebstemperatur -55 °C up to +125 °C | Verlustfaktor3 % | Isolationswiderstand5 GΩ | KeramiktypX7R Klasse II | Länge1.6 mm | Breite0.8 mm | Höhe0.8 mm | Pad Dimension0.4 mm | Verpackung7" Tape & Reel | – | – | – | – | – | – |