IC-Hersteller Texas Instruments

IC-Hersteller (103)

Texas Instruments TLV702 | Demoboard ADC3663EVM

300-mA, high-PSRR, low-IQ, low-dropout voltage regulator with enable

Details

TopologieSonstige Topologie
Eingangsspannung2.5-3.3 V
Ausgang 11.8 V
IC-RevisionD

Beschreibung

The TLV702 series of low-dropout (LDO) linear regulators are low quiescent current devices with excellent line and load transient performance. These LDOs are designed for power-sensitive applications. A precision bandgap and error amplifier provides overall 2% accuracy. Low output noise, very high power-supply rejection ratio (PSRR), and low-dropout voltage make this series of devices ideal for a wide selection of battery-operated handheld equipment. All device versions have thermal shutdown and current limit for safety.Furthermore, these devices are stable with an effective output capacitance of only 0.1 µF. This feature enables the use of cost-effective capacitors that have higher bias voltages and temperature derating. The devices regulate to specified accuracy with no output load.The TLV702P series also provides an active pulldown circuit to quickly discharge the outputs.The TLV702 series of LDO linear regulators are available in SOT23-5 and 1.5-mm × 1.5-mm WSON-6 packages.

Eigenschaften

  • Very Low Dropout:
  • 37 mV at IOUT = 50 mA, VOUT = 2.8 V
  • 75 mV at IOUT = 100 mA, VOUT = 2.8 V
  • 220mV at IOUT = 300 mA, VOUT = 2.8 V
  • 2% Accuracy
  • Low IQ: 35 µA
  • Fixed-Output Voltage Combinations Possible from 1.2 V to 4.8 V
  • High PSRR: 68 dB at 1 kHz
  • Stable With Effective Capacitance of 0.1 µF(1)
  • Thermal Shutdown and Overcurrent Protection
  • Packages: 5-Pin SOT-23 and 1.5-mm × 1.5-mm,6-Pin WSON (1)

Typische Anwendungen

  • Bluetooth® Devices, ZigBee® Networks
  • Wireless Handsets, Smart Phones
  • WLAN and Other PC Add-on Cards
  • Li-Ion Battery-Operated Handheld Products

Weiterführende Informationen

Artikeldaten

Artikel Nr.
Daten­blatt
Simu­lation
Downloads
Status
Produktserie
C
Tol. C
VR(V (DC))
Bauform
Betriebstemperatur
DF(%)
RISO
Keramiktyp
L(mm)
B(mm)
H(mm)
Fl(mm)
Verpackung
Z @ 100 MHz(Ω)
Zmax(Ω)
Testbedingung Zmax
IR 2(mA)
RDC max.(Ω)
Typ
Muster
WCAP-CSGP MLCCs 16 V(DC), 1 µF, ±10%
Simu­lation
Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre.
Kapazität1 µF
Kapazität±10% 
Nennspannung16 V (DC)
Bauform0603 
Betriebstemperatur -55 °C up to +125 °C
Verlustfaktor10 %
Isolationswiderstand0.1 GΩ
KeramiktypX7R Klasse II 
Länge1.6 mm
Breite0.8 mm
Höhe0.8 mm
Pad Dimension0.4 mm
Verpackung7" Tape & Reel 
WCAP-CSGP MLCCs 10 V(DC), 10 µF, ±10%
Simu­lation
Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre.
Kapazität10 µF
Kapazität±10% 
Nennspannung10 V (DC)
Bauform0805 
Betriebstemperatur -55 °C up to +125 °C
Verlustfaktor10 %
Isolationswiderstand0.01 GΩ
KeramiktypX7R Klasse II 
Länge2 mm
Breite1.25 mm
Höhe1.25 mm
Pad Dimension0.5 mm
Verpackung7" Tape & Reel 
WE-CBF SMT-Ferrit, –, –
Simu­lation
Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre.
ProduktserieWE-CBF SMT-Ferrit
Bauform0402 
Betriebstemperatur -55 °C up to +125 °C
Länge1 mm
Breite0.5 mm
Höhe0.5 mm
Pad Dimension0.25 mm
Impedanz @ 100 MHz120 Ω
Maximale Impedanz200 Ω
Maximale Impedanz600 MHz 
Nennstrom 21100 mA
Gleichstromwiderstand0.2 Ω
TypBreitband