| Topologie | Aufwärtswandler |
| Eingangsspannung | 1.8-5.5 V |
| Ausgang 1 | 28 V / 0.98 A |
| IC-Revision | DECEMBER 2025 |
This reference design provides a design template for implementing a three-level, three-phase plus neutral, Gallium Nitride (GaN) based flying capacitor power stage. The use of fast switching power devices allows switching at an equivalent frequency of 125kHz, reducing the size of magnetics for the filter and increasing the power density of the power stage. The multilevel topology allows the use of 650V rated power devices at higher DC bus voltages of up to 900V. The lower switching voltage stress across the transistors reduces the switching losses, resulting in an efficiency of 98.9% at full power.
Power stage for three-phase plus neutralbidirectional DC/AC converter
Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | L(µH) | IR 1(mA) | IR 2(mA) | ISAT(mA) | RDC(mΩ) | fres(MHz) | Typ | H(mm) | B(mm) | Muster | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() | WE-PMI Power-Multilayer-Induktivität, 2.2 µH, 550 mA | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-PMI Power-Multilayer-Induktivität | Induktivität2.2 µH | Nennstrom 1550 mA | Nennstrom 2800 mA | Sättigungsstrom280 mA | Gleichstromwiderstand300 mΩ | Eigenresonanzfrequenz80 MHz | TypLow RDC | Höhe0.9 mm | Breite0.8 mm |