| Topologie | Leistungsfaktor-Korrektur |
| Eingangsspannung | 36-60 V |
| Schaltfrequenz | 400-1000 kHz |
| Ausgang 1 | 1.2 V / 40 A |
| IC-Revision | A |
The PMP4497 is a GaN-based reference design solution for the Vcore such as FPGA, ASIC applications. With high integration and low switching loss, the GaN module LMG5200 enables a high efficiency single stage from 48V to 1.0V solution to replace the traditional 2-stage solution. This design shows the GaN performance and the system advantages, compared with the 2-stages solution. A low cost ER18 planar PCB transformer is embedded on the board. The design was achieved in a compact form factor (45mm26mm11mm). The size could be further reduced by optimizing frequency and components.http://www.ti.com/tool/PMP4497#Technical%20Documents
Remark: BOM &Schematic PDF are added with User Guide.
Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | L(µH) | ISAT(A) | RDC max.(mΩ) | fres(MHz) | Bauform | Version | Muster | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() | WE-PD SMT-Speicherdrossel, 4.7 µH, 2.5 A | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-PD SMT-Speicherdrossel | Induktivität4.7 µH | Sättigungsstrom2.5 A | Gleichstromwiderstand78 mΩ | Eigenresonanzfrequenz53 MHz | Bauform6033 | VersionRobust |