IC-Hersteller Texas Instruments

IC-Hersteller (103)

Texas Instruments LM76003RNPR | Demoboard TIDA-01606 Power Card

10kW 3-Phase 3-Level Grid Tie Inverter Reference Design for Solar String Inverter

Details

TopologieAbwärtswandler
Eingangsspannung15 V
Schaltfrequenz300-2200 kHz
Ausgang 112 V
IC-RevisionE4

Beschreibung

This verified reference design provides an overview on how to implement a three-level three-phase SiC based DC:AC grid-tie inverter stage.Higher switching frequency of 50KHz reduces the size of magnetics for the filter design and enables higher power density. The use of SiC MOSFETs with switching loss ensures higher DC bus voltages of up to 1000V and lower switching losses with a peak efficiency of 99 percent. This design is configurable to work as a two-level or three-level inverter.The system is controlled by a single C2000 microcontroller (MCU), TMS320F28379D, which generates PWM waveforms for all power electronic switching devices under all operating modes.

Eigenschaften

  • Rated Nominal and Max Input Voltage at 800-V and 1000-V DC
  • Max 10-kW/10-kVA Output Power at 400-V AC 50- or 60-Hz Grid-Tie Connection
  • Operating Power Factor Range From 0.7 Lag to 0.7 Lead
  • High-Voltage (1200-V) SiC MOSFET-Based FullBridge Inverter for Peak Efficiency of 98.5%
  • Compact Output Filter by Switching Inverter at 50 kHz
  • <2% Output Current THD at Full Load
  • Isolated Driver ISO5852S With Reinforced Isolation for Driving High-Voltage SiC MOSFET and UCC5320S for Driving Middle Si IGBT
  • Isolated Current Sensing Using AMC1301 for Load Current Monitoring
  • TMS320F28379D Control Card for Digital Control

Typische Anwendungen

  • Programmable logic controllers
  • Telecommunications infrastructure / Asset and fleet management systems / Video surveillance

Weiterführende Informationen

Artikeldaten

Artikel Nr.
Daten­blatt
Simu­lation
Downloads
Status
Produktserie
L(µH)
ISAT,10%(A)
ISAT,30%(A)
IR,40K(A)
IRP,40K(A)
RDC max.(mΩ)
fres(MHz)
Bauform
Version
C
VR(V (DC))
Endurance(h)
IRIPPLE(mA)
RESR(mΩ)
ILeak(µA)
DF(%)
Ø D(mm)
L(mm)
Verpackung
Muster
WE-PD Speicherdrossel, 22 µH, 6.5 A
Simu­lation
Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre.
Induktivität22 µH
Sättigungsstrom 16.5 A
Sättigungsstrom @ 30%8 A
Nennstrom5.3 A
Performance Nennstrom7 A
Gleichstromwiderstand28 mΩ
Eigenresonanzfrequenz10 MHz
Bauform1210 
VersionGestanzt 
Länge12 mm
WCAP-PSLP Aluminium-Polymer-Kondensatoren, –, –
Simu­lation
Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre.
Bauform6.3 x 5.8 
Kapazität33 µF
Nennspannung20 V (DC)
Endurance 2000
Rippelstrom2200 mA
ESR (Serienersatzwiderstand)35 mΩ
Leckstrom600 µA
Verlustfaktor8 %
Durchmesser6.3 mm
Länge5.8 mm
Verpackung15" Tape & Reel