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Details
| Topologie | Abwärtswandler |
| Eingangsspannung | 5-36 V |
| Schaltfrequenz | 200-2200 kHz |
| Ausgang 1 | 5 V / 3 A |
| IC-Revision | A |
Beschreibung
The LM61430-Q1 is a high-performance, DC-DC synchronous step-down converter. With integrated high-side and low-side MOSFETs, up to 3 A of output current is delivered over a wide input range from 3.0 V to 36 V tolerant of 42 V, easing input surge protection design. The LM61430-Q1 implements soft recovery from dropout eliminating overshoot on the output.
Eigenschaften
- AEC-Q100 qualified for automotive applications
- Temperature grade 1: –40°C to +150°C, TJ
- Functional Safety-Capable
- Documentation available to aid functional safety system design
- Optimized for ultra low EMI requirements
- HotRod™ package minimizes switch node ringing
- Parallel input path minimizes parasitic inductance
- Adjustable SW node rise time
- Designed for automotive applications
- Supports 42-V automotive load dump
- ±1% total output regulation accuracy
- VOUT adjustable from 1 V to 95% of VIN
- High efficiency power conversion at all loads
- 7-µA nonswitching current at 13.5 VIN, 3.3 VOUT
- External bias option for improved efficiency
- Suitable for scalable power supplies
- Pin compatible with:
- LM61435-Q1 (36 V, 3.5 A, adjustable fsw)
- LM61440-Q1 (36 V, 4 A, adjustable fSW)
- LM61460-Q1 (36 V, 6 A, adjustable fSW)
Typische Anwendungen
- Automotive ADAS and body electronics, Automotive infotainment and cluster: head unit, media hub, USB charge, display
Weiterführende Informationen
Artikeldaten
Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | L(µH) | IRP,40K(A) | ISAT,30%(A) | RDC typ.(mΩ) | fres(MHz) | VOP(V) | Montageart | ISAT,10%(A) | RDC(mΩ) | Material | Muster | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | WE-MAPI SMT-Speicherdrossel, 1 µH, 10.1 A | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-MAPI SMT-Speicherdrossel | Induktivität1 µH | Performance Nennstrom10.1 A | Sättigungsstrom @ 30%11.5 A | Gleichstromwiderstand12 mΩ | Eigenresonanzfrequenz55 MHz | Betriebsspannung80 V | MontageartSMT | Sättigungsstrom 15.3 A | – | – | ||||
| WE-MAPI SMT-Speicherdrossel, 1.5 µH, 8.6 A | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-MAPI SMT-Speicherdrossel | Induktivität1.5 µH | Performance Nennstrom8.6 A | Sättigungsstrom @ 30%10.2 A | Gleichstromwiderstand16 mΩ | Eigenresonanzfrequenz48 MHz | Betriebsspannung80 V | MontageartSMT | Sättigungsstrom 14.8 A | – | – | ||||
 | WE-HCI SMT-Hochstrominduktivität, 2.2 µH, 9.2 A | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-HCI SMT-Hochstrominduktivität | Induktivität2.2 µH | Performance Nennstrom9.2 A | Sättigungsstrom @ 30%7.5 A | – | Eigenresonanzfrequenz108 MHz | – | MontageartSMT | Sättigungsstrom 13.5 A | Gleichstromwiderstand11.3 mΩ | MaterialSuperflux |