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Texas Instruments LM5170-Q1 | Demoboard LM5170EVM-BIDIR

LM5170-Q1 Multiphase Bidirectional Current Controller

Details

TopologieAbwärts- und Aufwärtswandler
Eingangsspannung48 V
Ausgang 150.5 V / 60 A
IC-RevisionA

Beschreibung

The LM5170EVM-BIDIR Evaluation Module (EVM) is designed to showcase the LM5170-Q1 highperformance dual-channel bidirectional controller suitable for, but not limited to, the automotive 48-V to 12-V dual battery system applications.The EVM can be configured to achieve a bidirectional power converter in the form of either the currentsource or voltage source. The direction of power flow can be controlled either by an external commandsignal or by the on-board jumper. Through the onboard interface headers, the EVM can be operated by aDSP, an FPGA, an MCU, or other digital controllers. Two EVMs can be paralleled to make a 3 or 4phases interleaved converter for higher power. More EVMs can be paralleled for greater number ofphases. Many convenient jumper headers are also included for versatile configurations of the EVM.

Eigenschaften

The EVM supports the following features and performance capabilities:

  • Input Operating Voltage Ranges– The 48VDC-Port 6 V to 75 V, in the Buck Mode– The 12VDC-Port 3 V to 48 V, in the Boost Mode
  • Output Voltage Regulation (With the Onboard Outer Voltage Loop Control Activated)– 14.5-V Output Voltage at the 12VDC-Port, in the Buck Mode– 50.5-V Output Voltage at the 48VDC-Port, in the Boost Mode
  • Operating Current– 60-Adc Maximum from or into the 12VDC-Port– Typical 1% Current Regulation Accuracy– Typical 1% Current Monitor Accuracy
  • Switching Frequency:– Standalone Fsw = 100 kHz– Able to Synchronize to an External Clock from 80 kHz to 120 kHz.
  • Maximum Efficiency: >97%
  • OVP Threshold– 75 V at the 48VDC-Port– 22 V at the 12VDC-Port– Synchronous Rectifier Diode Emulation Function Preventing Negative Current
  • Other Convenient Features– Optional Onboard Wide-VIN™ LM5118-Q1 Buck-Boost Converter as the +10-V Supply– Onboard Ultra Low IQ TPS709-Q1 LDOs for +3.3-V and +5.0-V Bias Voltages for Convenient EVMConfigurations and for Biasing the External MCU through Headers.– Onboard LM26LV Temperature Sensors Monitoring Local Temperatures of Power MOSFETs, WithOptional Overtemperature Shutdown and LED Indicator.– LED indicators of Buck and Boost Operating Modes.– Optional Channel Current Shunt AC Filters for Accurate DVM Reading (Unpopulated).

Weiterführende Informationen

Artikeldaten

Artikel Nr.
Daten­blatt
Simu­lation
Downloads
Status
Produktserie
λDom typ.(nm)
Emittierte Farbe
λPeak typ.(nm)
IV typ.(mcd)
VF typ.(V)
Chiptechnologie
50% typ.(°)
L(µH)
IRP,40K(A)
ISAT,10%(A)
ISAT,30%(A)
RDC max.(mΩ)
fres(MHz)
Drahttype
Muster
WL-SMCW SMT Mono-color Chip LED Waterclear, 570 nm, Hellgrün
Simu­lation
Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre.
dominante Wellenlänge [typ.]570 nm
Emittierte FarbeHellgrün 
Spitzen-Wellenlänge [typ.]572 nm
Lichtstärke [typ.]40 mcd
Durchlassspannung [typ.]2 V
ChiptechnologieAlInGaP 
Abstrahlwinkel Phi 0° [typ.]140 °
WL-SMCW SMT Mono-color Chip LED Waterclear, 590 nm, Gelb
Simu­lation
Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre.
dominante Wellenlänge [typ.]590 nm
Emittierte FarbeGelb 
Spitzen-Wellenlänge [typ.]595 nm
Lichtstärke [typ.]120 mcd
Durchlassspannung [typ.]2 V
ChiptechnologieAlInGaP 
Abstrahlwinkel Phi 0° [typ.]140 °
WL-SMCW SMT Mono-color Chip LED Waterclear, 630 nm, Superrot
Simu­lation
Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre.
dominante Wellenlänge [typ.]630 nm
Emittierte FarbeSuperrot 
Spitzen-Wellenlänge [typ.]645 nm
Lichtstärke [typ.]60 mcd
Durchlassspannung [typ.]1.9 V
ChiptechnologieAlInGaP 
Abstrahlwinkel Phi 0° [typ.]140 °
WE-HCF SMT-Hochstrominduktivität, –, –
Simu­lation
Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre.
Induktivität4.7 µH
Performance Nennstrom44 A
Sättigungsstrom 144 A
Sättigungsstrom @ 30%48 A
Gleichstromwiderstand1.44 mΩ
Eigenresonanzfrequenz21.56 MHz
DrahttypeFlach