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STMicroelectronics ST7590 | Demoboard AN4444
ST7590 PRIME compliant power line networking SoC design guide
Details
| Topologie | Sperrwandler |
| Eingangsspannung | 230 V |
| IC-Revision | 2 |
Beschreibung
The ST7590 reference design has been realized as a useful tool that exploits theperformance capability of the ST7590 power line networking system-on-chip.With this reference design, it is possible to evaluate, directly on the power line, thetransmitting and receiving performance of a power line communication node based on theST7590 device.The line coupling interface is designed to allow the ST7590 device to transmit and receiveon the AC mains line using the PRIME OFDM signal within the European CENELECEN50065-1 standard A band, specified for “Automatic Meter Reading” (AMR) applications(see Part 1 of Section 14: Normative references on page 63).An STM32™ microcontroller has been included in the reference design to make it veryflexible and suitable for use as a standalone smart PLC node.
Weiterführende Informationen
Artikeldaten
Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | L(µH) | IRP,40K(A) | ISAT(A) | RDC max.(Ω) | fres(MHz) | Bauform | Version | IR(A) | ISAT,10%(A) | ISAT,30%(A) | Muster | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | WE-PD2 SMT-Speicherdrossel, 15 µH, – | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-PD2 SMT-Speicherdrossel | Induktivität15 µH | – | Sättigungsstrom2.88 A | Gleichstromwiderstand0.08 Ω | Eigenresonanzfrequenz20 MHz | Bauform1054 | – | Nennstrom2.47 A | – | – | ||||
 | WE-PD SMT-Speicherdrossel, 470 µH, 0.42 A | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-PD SMT-Speicherdrossel | Induktivität470 µH | Performance Nennstrom0.42 A | Sättigungsstrom0.31 A | Gleichstromwiderstand4.18 Ω | Eigenresonanzfrequenz4 MHz | Bauform7332 | VersionGestanzt | Nennstrom0.3 A | Sättigungsstrom 10.31 A | Sättigungsstrom @ 30%0.39 A | ||||
 | 750510231 | Transformer, 1000 µH, – | Simulation– | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | Produktserie Transformer | Induktivität1000 µH | – | – | – | – | BauformEP13 | – | – | – | – |