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Details
| Topologie | Abwärtswandler |
| Eingangsspannung | 5 V |
| Ausgang 1 | 3.3 V / 1 A |
Artikeldaten
Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | L(µH) | IRP,40K(A) | ISAT,30%(A) | RDC typ.(mΩ) | fres(MHz) | VOP(V) | Montageart | Muster | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | WE-MAPI SMT-Speicherdrossel, 2.2 µH, 1.65 A | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-MAPI SMT-Speicherdrossel | Induktivität2.2 µH | Performance Nennstrom1.65 A | Sättigungsstrom @ 30%2.8 A | Gleichstromwiderstand252 mΩ | Eigenresonanzfrequenz60 MHz | Betriebsspannung80 V | MontageartSMT |