IC-Hersteller STMicroelectronics

IC-Hersteller (103)

STMicroelectronics L5989D

4 A continuous (more than 5 A pulsed) step-down switching regulator with synchronous rectification

Details

TopologieAbwärtswandler
Eingangsspannung2.9-18 V
Ausgang 10.6 V
IC-Revision4

Beschreibung

The L5989D is a monolithic step down power switching regulator able to deliver a continuos output current of 4 A to the load in most of the application conditions limited only by the thermal performance (see Chapter 6.5 for details). The device is able to deliver more than 5 A to the load for a maximum time which is dependent on the thermal impedance of the system and the specific operating conditions (see Chapter 6.6).The input voltage can range from 2.9 V to 18 V. The device is capable of 100% duty cycle operation thanks to the embedded high side PMOS switch which doesn’t need external bootstrap capacitor to be driven.The internal switching frequency is adjustable by external resistor and can be set continuously from 100 kHz to 1 MHz.The multifunction UOS pin allows to set-up properly the additional embedded features depending on the value of the voltage level.U (UVLO): two UVLO thresholds can be selected to match the 3.3 V and 5 V or 12 V input buses O (OVP): latched or not latched OVP protection selectable. In latched mode the switching activity is interrupted until an UVLO or INH event happens S (SINK): the sink capability is always disabled during soft-start time to support prebiased output voltage. Afterwards the sink capability can be enabled or not depending on the voltage set on the multifunction pin.During soft-start phase a constant current protection is active to deliver extra current necessary to load the output capacitor. The current limit protection is achieved by sensing the current flowing in both embedded switches to assure an effective protection even at extreme duty cycle operations. Finished the soft-start phase the current protection featuretriggers the “HICCUP” mode forcing the soft-start capacitor to be discharged and recharged.The current thresholds of both switches can be adjusted in tracking by using an external resistor to dimension the current protection accordingly to the local application.The soft-start time is based on a constant current charge of an external capacitor. As a consequence the time can be set accordingly to the value of the output capacitor.The latest smart power technology BCD6 (Bipolar-CMOS-DMOS version 6) features a low resistance of the embedded switches (35 mΩ typical for a NMOS, 50 mΩ typical for a PMOS), achieving high efficiency levels.The HTSSOP16 package with exposed pad accomplishes low RthJA (40°C/W), useful in dissipating power internally generated during high output current / high frequency operations.

Eigenschaften

  • 4 A output current (more than 5 pulsed)
  • Operating input voltage from 2.9 V to 18 V
  • External 1.8 V ± 2% reference voltage
  • Output voltage from 0.6 to input voltage
  • MLCC compatible
  • 200 ns TON
  • Programmable UVLO matches 3.3 V, 5 V and
  • 12 V bus
  • FSW programmable up to 1 MHz
  • Voltage feed-forward
  • Zero load current operation
  • Programmable current limit on both switches
  • Programmable sink current capability
  • Pre-bias start up capability
  • Thermal shutdown

Typische Anwendungen

  • Industrial: DC-DC modules, factory automation
  • Consumer: STB, DVD, LCD TV, VCR, car
  • HC LED driving
  • Computer and peripherals: printers, audio /
  • Networking: XDSL, modems, routers and

Weiterführende Informationen

Artikeldaten

Artikel Nr.
Daten­blatt
Simu­lation
Downloads
Status
Produktserie
L(µH)
IR(A)
ISAT(A)
fres(MHz)
Montageart
IRP,40K(A)
RDC max.(mΩ)
Bauform
Version
ISAT,10%(A)
ISAT,30%(A)
RDC(mΩ)
Material
Muster
WE-HCI SMT-Hochstrominduktivität, 3.3 µH, –
Simu­lation
Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre.
Induktivität3.3 µH
Eigenresonanzfrequenz43 MHz
MontageartSMT 
Performance Nennstrom8.1 A
Gleichstromwiderstand18.92 mΩ
Bauform7040 
VersionSMT 
Sättigungsstrom 14.5 A
Sättigungsstrom @ 30%11 A
Gleichstromwiderstand17.2 mΩ
MaterialSuperflux 
WE-HCI SMT-Hochstrominduktivität, 3.3 µH, –
Simu­lation
Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre.
Induktivität3.3 µH
Eigenresonanzfrequenz65 MHz
MontageartSMT 
Performance Nennstrom10.9 A
Gleichstromwiderstand9.9 mΩ
Bauform7050 
VersionSMT 
Sättigungsstrom 13.2 A
Sättigungsstrom @ 30%8 A
Gleichstromwiderstand9 mΩ
MaterialSuperflux 
WE-TPC SMT-Speicherdrossel, 3.5 µH, 6.6 A
Simu­lation
Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre.
Induktivität3.5 µH
Nennstrom6.6 A
Sättigungsstrom6.4 A
Eigenresonanzfrequenz35 MHz
MontageartSMT 
Gleichstromwiderstand15 mΩ
Bauform1038 
VersionSMT 
WE-HCI SMT-Hochstrominduktivität, 4.3 µH, –
Simu­lation
Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre.
Induktivität4.3 µH
Eigenresonanzfrequenz33 MHz
MontageartSMT 
Performance Nennstrom10.9 A
Gleichstromwiderstand15.51 mΩ
Bauform1040 
VersionSMT 
Sättigungsstrom 13.5 A
Sättigungsstrom @ 30%8 A
Gleichstromwiderstand14.1 mΩ
MaterialWE-PERM 
WE-HCI SMT-Hochstrominduktivität, 4.7 µH, –
Simu­lation
Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre.
Induktivität4.7 µH
Eigenresonanzfrequenz33 MHz
MontageartSMT 
Performance Nennstrom7.8 A
Gleichstromwiderstand21.45 mΩ
Bauform7040 
VersionSMT 
Sättigungsstrom 12.5 A
Sättigungsstrom @ 30%7 A
Gleichstromwiderstand19.5 mΩ
MaterialSuperflux 
WE-TPC SMT-Speicherdrossel, 5 µH, 5.3 A
Simu­lation
Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre.
Induktivität5 µH
Nennstrom5.3 A
Sättigungsstrom5.5 A
Eigenresonanzfrequenz30 MHz
MontageartSMT 
Gleichstromwiderstand22 mΩ
Bauform1038 
VersionSMT 
WE-TPC SMT-Speicherdrossel, 6.2 µH, 5 A
Simu­lation
Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre.
Induktivität6.2 µH
Nennstrom5 A
Sättigungsstrom4.5 A
Eigenresonanzfrequenz25 MHz
MontageartSMT 
Gleichstromwiderstand24 mΩ
Bauform1038 
VersionSMT 
WE-PD SMT-Speicherdrossel, 10 µH, 5 A
Simu­lation
Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre.
Induktivität10 µH
Nennstrom5 A
Sättigungsstrom5.5 A
Eigenresonanzfrequenz21.5 MHz
MontageartSMT 
Performance Nennstrom7.7 A
Gleichstromwiderstand24 mΩ
Bauform1260 
VersionGestanzt 
Sättigungsstrom 15.5 A
Sättigungsstrom @ 30%7.2 A