| Topologie | Abwärtswandler |
| Eingangsspannung | 10-56 V |
| Schaltfrequenz | 50-500 kHz |
| Ausgang 1 | 1 V |
The BD9611MUV is a high-resistance, wide voltage input (10V to 56V), synchronous step-down switching regulator. BD9611MUV offers design flexibility through user-programmable functions such as soft-start, operating frequency, high-side current limit, and loop compensation. BD9611MUV uses voltage pulse width modulation, and drives 2 external N-channel FETs. The Under-Voltage Locked Output (EXUVLO) protection connected to its CTL terminal has high accuracy reference voltage. Its threshold voltage can be adjusted by the resistance ratio between VCC and GND as seen by pin CTL. BD9611MUV is safe for pre-biased outputs. It does not turn on the synchronous rectifier until the internal high-side FET has already started switching.
Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | L(µH) | IRP,40K(A) | ISAT,10%(A) | ISAT,30%(A) | RDC(mΩ) | fres(MHz) | Material | IR(A) | ISAT(A) | RDC max.(mΩ) | Montageart | Muster | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() | WE-HCI SMT-Hochstrominduktivität, 10 µH, 16.5 A | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-HCI SMT-Hochstrominduktivität | Induktivität10 µH | Performance Nennstrom16.5 A | Sättigungsstrom 110 A | Sättigungsstrom @ 30%21.5 A | Gleichstromwiderstand6.9 mΩ | Eigenresonanzfrequenz14 MHz | MaterialWE-PERM 2 | – | – | Gleichstromwiderstand7.452 mΩ | MontageartSMT | ||||
![]() | WE-FAMI THT Speicherdrossel, 10 µH, – | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-FAMI THT Speicherdrossel | Induktivität10 µH | – | – | – | – | – | – | Nennstrom11.4 A | Sättigungsstrom13.4 A | Gleichstromwiderstand6.8 mΩ | MontageartTHT |