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Details
| Topologie | Abwärtswandler |
| Eingangsspannung | 4.5-17 V |
| Ausgang 1 | 5 V / 12 A |
| IC-Revision | 00 |
Beschreibung
The RTQ2822A/B is a high-performance, synchronous step-down converter that can deliver up to 12A output current with an input supply voltage range of 4.5V to 17V. The device integrates low RDS(ON) power MOSFETs, accurate 0.6V reference and an integrated diode for bootstrap circuit to offer a very compact solution. Switching frequency is selectable in 400kHz, 800kHz and 1200 kHz.
Eigenschaften
- 4.5V to 17V Input Voltage Range
- Integrated 9.8m/4.5mMOSFETs
- 0.6V ±1% Voltage Reference
- Adjustable Output Voltage from 0.6V to 5.5V
- Supports Ceramic Output Capacitor
- ACOTTM Control for Fast Transient Response
- Selectable Switching Frequency (400kHz/800kHz/1200kHz)
- Selectable Current Limit Level
- Power Good Indicator
- Programmable Soft-Start Time with a Default 1ms
- Monotonic Start-Up into Pre-Biased Outputs
- 18-Lead VQFN (FC) Package
Typische Anwendungen
- Point of Load (POL) Power Modules / High Density DC-DC Converters
- Server, Storage and Network Equipment / Telecom Infrastructure
- High End Digital TV
Weiterführende Informationen
Artikeldaten
Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | L(µH) | IRP,40K(A) | ISAT,10%(A) | ISAT,30%(A) | RDC(mΩ) | fres(MHz) | Material | Muster | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | WE-HCI SMT-Hochstrominduktivität, 0.68 µH, 20.9 A | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-HCI SMT-Hochstrominduktivität | Induktivität0.68 µH | Performance Nennstrom20.9 A | Sättigungsstrom 19.5 A | Sättigungsstrom @ 30%20 A | Gleichstromwiderstand3.1 mΩ | Eigenresonanzfrequenz105 MHz | MaterialSuperflux | ||||
| WE-HCI SMT-Hochstrominduktivität, 1.2 µH, 32.6 A | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-HCI SMT-Hochstrominduktivität | Induktivität1.2 µH | Performance Nennstrom32.6 A | Sättigungsstrom 112 A | Sättigungsstrom @ 30%25 A | Gleichstromwiderstand1.8 mΩ | Eigenresonanzfrequenz75 MHz | MaterialSuperflux | ||||
| WE-HCI SMT-Hochstrominduktivität, 2.4 µH, 18.6 A | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-HCI SMT-Hochstrominduktivität | Induktivität2.4 µH | Performance Nennstrom18.6 A | Sättigungsstrom 16.9 A | Sättigungsstrom @ 30%17 A | Gleichstromwiderstand4.75 mΩ | Eigenresonanzfrequenz67 MHz | MaterialSuperflux | ||||
| WE-HCI SMT-Hochstrominduktivität, 3.3 µH, 16.6 A | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-HCI SMT-Hochstrominduktivität | Induktivität3.3 µH | Performance Nennstrom16.6 A | Sättigungsstrom 15 A | Sättigungsstrom @ 30%15 A | Gleichstromwiderstand5.9 mΩ | Eigenresonanzfrequenz54 MHz | MaterialSuperflux |