IC-Hersteller Richtek

IC-Hersteller (103)

Richtek RT8073

6A, 2MHz, High Efficiency Synchronous Step-Down Converter

Details

TopologieAbwärtswandler
Eingangsspannung2.9-5.5 V
Schaltfrequenz300-2000 kHz
Ausgang 13.3 V / 6 A
IC-Revision2.0

Beschreibung

6A, 2MHz, High Efficiency Synchronous Step-Down ConverterThe RT8073 is a high efficiency PWM step-down converterand capable of delivering 6A output current over a wideinput voltage range from 2.9V to 5.5V.The RT8073 provides accurate regulation for a variety ofloads with an ±1% reference voltage at room temperature.For reducing inductor size, it provides up to 2MHzswitching frequency. The efficiency is maximized throughthe integrated 50mΩ for high side, 35mΩ for low sideMOSFETs and 250μA typical supply current.The RT8073 features over current protection, frequencyfold back function in shorted circuit, hiccup mode undervoltage protection and over temperature protection.The RT8073 is available in SOP-8 (Exposed Pad) andWDFN-12L 3x3 packages.

Eigenschaften

Integrated 50mΩ and 35mΩ MOSFETs 6A Output Current High Efficiency Up to 95% 2.9V to 5.5V Input Range Adjustable PWM Frequency : 300kHz to 2MHz 0.8V ±1% Reference Voltage Adjustable External Soft-Start Power Good Indicator (WDFN-12L 3x3 only) Over Current Protection Under Voltage Protection Over Temperature Protection SOP-8 (Exposed Pad) and 12-Lead WDFN Packages RoHS Compliant and Halogen Free

Typische Anwendungen

  • Point-of-Load Conversions
  • Distributed Power Systems
  • LCD TV
  • Low Voltage, High Density Power Systems

Weiterführende Informationen

Artikeldaten

Artikel Nr.
Daten­blatt
Simu­lation
Downloads
Status
Produktserie
L(nH)
IRP,40K(A)
ISAT,10%(A)
ISAT,30%(A)
RDC(mΩ)
fres(MHz)
Material
LR(nH)
IR(A)
Muster
WE-HCM SMT-Hochstrominduktivität, 330 nH, 54.3 A
Simu­lation
Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre.
Induktivität330 nH
Performance Nennstrom54.3 A
Sättigungsstrom 127.3 A
Sättigungsstrom @ 30%32 A
Gleichstromwiderstand0.37 mΩ
Eigenresonanzfrequenz35 MHz
MaterialMnZn 
Nenninduktivität305 nH
Nennstrom25 A
WE-HCI SMT-Hochstrominduktivität, 470 nH, 54.9 A
Simu­lation
Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre.
Induktivität470 nH
Performance Nennstrom54.9 A
Sättigungsstrom 125 A
Sättigungsstrom @ 30%50 A
Gleichstromwiderstand0.67 mΩ
Eigenresonanzfrequenz100 MHz
MaterialWE-PERM 
Nenninduktivität410 nH