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Qorvo ACT41000 | Demoboard ACT41000EVK-104-REF01
Programmable Voltage, Programmable Current, Low Noise RFPoL Step-Down Voltage Regulator
Details
| Topologie | Abwärtswandler |
| Eingangsspannung | 24-40 V |
| Ausgang 1 | 22 V / 4 A |
| IC-Revision | 3.0 |
Beschreibung
ACT41000-104-REF01 reference design provides both the drain and gate voltages for many of Qorvo’s RF PAs. It automatically searches for and optimizes the optimal RF PA gate voltage to set the correct Idq bias current. This reference design demonstrates how Qorvo’s ACT41000 significantly simplifies RF PA system level design and cost. The design is specifically configured for the QPA2211, but it can be easily modified for many other RF PAs.This document describes the characteristics and operation of the Qorvo ACT41000EVK-104 REF01 reference design. It provides setup and operation instructions, schematic, layout, BOM, GUI, and test data. The design demonstrates the ACT41000QI104.E1T (22V) power management IC. Other ACT41000QIxxx options can be evaluated on this EVK by replacing the IC and any other necessary components. The initial design is optimized for the QPA2211.
Eigenschaften
- 4.5 to 40 V operational input voltage
- Programmable output voltage by I2C from 3 to 24 V in 12.5 mV steps
- Programmable output current limit from 0 to 4 A in 256 steps
- Integrated current DAC for bias detection and automatic system level bias threshold trigger
- Fixed-frequency current mode control from 450 kHz - 2.25 MHz with external clock sync and 100% duty operation
- 5 V bias, 350 mA buck converter
- 20 mA AUX LDO programmable output 0.9 to 4.0 V
Typische Anwendungen
- RF PA (GaN/GaAs) Drain Bias / Power with IDQ Search, General Telecom and Industrial Power Supplies
- Telecom RF Modules, Radar Systems
Weiterführende Informationen
Artikeldaten
Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | Pins | PCB/Kabel/Panel | Modularity | Typ | Wire Section | L(µH) | IR(A) | ISAT(A) | RDC(mΩ) | fres(MHz) | IRP,40K(A) | ISAT,10%(A) | ISAT,30%(A) | RDC max.(mΩ) | Montageart | C | VR(V (DC)) | Endurance(h) | IRIPPLE(mA) | ILeak(µA) | DF(%) | Raster(mm) | Ø D(mm) | L(mm) | Verpackung | H(mm) | Arbeitsspannung(V (AC)) | Betriebstemperatur | Muster | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | WR-TBL Series 2141S - 3.50 mm Horizontal Entry Modular w. Rising Cage Clamp, 2, Rising Cage Clamp | Simulation– | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | Pins2 | PCB/Kabel/PanelPCB | ModularityJa | TypHorizontal | Wire Section 30 to 16 (AWG) 0.05 to 1.31 (mm²) | – | Nennstrom10 A | – | – | – | – | – | – | – | MontageartTHT | – | – | – | – | – | – | Raster3.5 mm | – | Länge7 mm | VerpackungKarton | – | Arbeitsspannung130 V (AC) | Betriebstemperatur -30 °C up to +120 °C | ||||
 | WR-PHD Stiftleisten - Einreihig, 2, – | Simulation– | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWR-PHD Stiftleisten - Einreihig | Pins2 | – | – | TypGerade | – | – | Nennstrom3 A | – | – | – | – | – | – | – | MontageartTHT | – | – | – | – | – | – | Raster2.54 mm | – | Länge5.08 mm | VerpackungBeutel | – | Arbeitsspannung250 V (AC) | Betriebstemperatur -40 °C up to +105 °C | |||
 | WE-LHMI SMT Speicherdrossel, –, – | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-LHMI SMT Speicherdrossel | – | – | – | – | – | Induktivität6.8 µH | – | – | – | Eigenresonanzfrequenz12 MHz | Performance Nennstrom6.4 A | Sättigungsstrom 18.5 A | Sättigungsstrom @ 30%17.7 A | Gleichstromwiderstand33.4 mΩ | MontageartSMT | – | – | – | – | – | – | – | – | Länge9.7 mm | – | Höhe4 mm | – | Betriebstemperatur -40 °C up to +125 °C | ||||
 | WCAP-ATG8 Aluminium-Elektrolytkondensatoren, –, – | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWCAP-ATG8 Aluminium-Elektrolytkondensatoren | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | Kapazität100 µF | Nennspannung50 V (DC) | Endurance 2000 | Rippelstrom286 mA | Leckstrom50 µA | Verlustfaktor10 % | Raster3.5 mm | Durchmesser8 mm | Länge11.5 mm | VerpackungAmmopack | – | – | – | ||||
 | WE-LQS SMT-Speicherdrossel, –, – | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-LQS SMT-Speicherdrossel | – | – | – | – | – | Induktivität22 µH | Nennstrom1.11 A | Sättigungsstrom0.7 A | Gleichstromwiderstand200 mΩ | Eigenresonanzfrequenz26 MHz | – | – | – | – | MontageartSMT | – | – | – | – | – | – | – | – | Länge4 mm | – | Höhe2.5 mm | – | Betriebstemperatur -40 °C up to +125 °C | ||||
| WE-LQS SMT-Speicherdrossel, –, – | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-LQS SMT-Speicherdrossel | – | – | – | – | – | Induktivität47 µH | Nennstrom0.71 A | Sättigungsstrom0.45 A | Gleichstromwiderstand492 mΩ | Eigenresonanzfrequenz15 MHz | – | – | – | – | MontageartSMT | – | – | – | – | – | – | – | – | Länge4 mm | – | Höhe2.5 mm | – | Betriebstemperatur -40 °C up to +125 °C |