IC-Hersteller Onsemi
IC-Hersteller (103)
- Alle Hersteller
Analog Devices
Infineon Technologies
Microchip
Onsemi
Renesas
ROHM
STMicroelectronics
Texas Instruments
- 3peak incorporated (28)
- Ablic (23)
- Acco Semiconductor (1)
- Advanced Power (4)
- Allegro Microsystems (100)
- Alpha & Omega Semiconductor (37)
- AnalogySemi (3)
- AnDAPT Inc (204)
- Anpec (13)
- AXElite (2)
- Backward (6)
- Bright Power Semiconductor (1)
- Broadcom (46)
- Cambridge GaN Devices (18)
- Chipanalog Micro (10)
- Cologne Chips (1)
- Convenient Power (1)
- Dialog Semiconductor (12)
- Diodes Incorporated (259)
- Divimath (8)
- Elmos AG (1)
- EPC (140)
- e-Peas Semiconductors (1)
- Eta Solutions Co. Ltd. (9)
- GaN Systems (8)
- GaNPower (3)
- Giantec (1)
- Gstek Wuxi (1)
- Helix Semiconductor (7)
- IKON (1)
- Indie Semiconductor (8)
- Innovision Semiconductor Inc (2)
- Intel (68)
- Inventchip Technology (3)
- ISSI (51)
- JoulWatt (20)
- KDPOF (3)
- Kinetic Technology (8)
- Lattice semiconductor Corporation (38)
- Littelfuse (1)
- Lumissil Microsystems (8)
- M3 Technology (M3Tek) (7)
- Macnica (22)
- Marvell Semiconductor (1)
- MaxLinear (181)
- Menlo Micro (1)
- MikroE (25)
- MindCet (2)
- Monolithic Power Systems (980)
- Navitas Semiconductor Inc (6)
- NewEdge Technologies, Inc. (1)
- Nexperia (267)
- Nisshinbo Micro Device Inc. (10)
- Novosense Micro (1)
- NXP (337)
- O2 Micro International Ltd (10)
- On Bright (7)
- Panasonic (2)
- PN Junction Semiconductor (2)
- Power Integrations (117)
- Powermat (1)
- Pulsiv (19)
- Qorvo (97)
- Realsil SuRealsil(tek) Microelectronics (1)
- Richtek (297)
- Sanken Electric Co., Ltd. (16)
- Sckipio (6)
- Semtech (86)
- SG-Micro (58)
- SiFive (2)
- Silanna Semiconductor (9)
- Silergy Corporation (33)
- Silicon Laboratory Inc. (108)
- Silicontent Technology (59)
- Silvertel (59)
- Skycore Semiconductors (1)
- Skyworks (33)
- Southchip (14)
- Summit Wireless (1)
- Tagore Tech (7)
- Taiwan Semiconductor (1)
- TDK Corporation (1)
- Tempo Semiconductor (1)
- Torex (37)
- Toshiba (25)
- Transphorm (21)
- TransSIP (2)
- Union (21)
- uPI Semiconductor (2)
- Valens Semiconductor (31)
- Wise Integration (3)
- Wolfspeed (23)
- Xilinx (22)
- XL Semiconductor (3)
- XYSemi (62)
Onsemi NCV8871 | Demoboard TND6319/D PTC IGBT Driver Reference Design
Automotive Grade Non-Synchronous Boost Controller
Details
| Topologie | Aufwärtswandler |
| Eingangsspannung | 200-400 V |
| Ausgang 1 | 380 V / 40 A |
| IC-Revision | 1 |
Beschreibung
This document is the entry point to the reference documentation of PTC heater discrete IGBT driver board evaluation platform, version 1.0.1.The evaluation platform is for thermal performance evaluation that provides developers with the tools and test data needed to build applications that drive PTC based on high current isolated driver and IGBT from On Semiconductor.This documentation focuses on the output voltage and current adjustment through high side and low side IGBT, and would help user to setup different variables, such as voltage, to get the wanted current and get the wanted test condition. Finally, it will help customer better understand isolated driver and IGBT performance by tested data and curve.
Eigenschaften
- Peak Current Mode Control with Internal Slope Compensation
- 1.2 V ±2% Reference voltage
- Fixed Frequency Operation
- Wide Input Voltage Range of 3.2 V to 40 Vdc, 45 V Load Dump
- Input Undervoltage Lockout (UVLO)
- Internal Soft−Start
- Low Quiescent Current in Sleep Mode
- Cycle−by−Cycle Current Limit Protection
- Hiccup−Mode Overcurrent Protection (OCP)
- Hiccup−Mode Short−Circuit Protection (SCP)
- Thermal Shutdown (TSD)
- NCV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP Capable
- This is a Pb−Free Device
Typische Anwendungen
- PTC heater / /Auto / Industry
Weiterführende Informationen
Artikeldaten
Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | C | VR 2(V (DC)) | dV/dt(V/µs) | DF @ 1 kHz(%) | RISO | Raster(mm) | Verpackung | IRP,40K(A) | ISAT,10%(A) | ISAT,30%(A) | fres(MHz) | Endurance(h) | IRIPPLE(mA) | ILeak(µA) | DF(%) | Ø D(mm) | Z(mΩ) | B(mm) | H(mm) | IR 1(A) | Ti | Tl(mm) | Pins | IR(A) | L(µH) | RDC max.(mΩ) | VR(V (DC)) | VT(V (AC)) | Material | L(mm) | Montageart | Muster | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | WCAP-FTBE Folienkondensatoren, 68 nF, 504 V (DC) | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWCAP-FTBE Folienkondensatoren | Kapazität68 nF | Nennspannung 2504 V (DC) | Spannungsanstiegsgeschwindigkeit52 V/µs | Verlustfaktor1 % | Isolationswiderstand9 GΩ | Raster10 mm | VerpackungKarton | – | – | – | – | – | – | – | – | – | – | Breite5.5 mm | Höhe11 mm | – | – | – | – | – | – | – | Nennspannung630 V (DC) | – | – | Länge13 mm | – | ||||
 | WCAP-ASLL Aluminium-Elektrolytkondensatoren, 10 µF, – | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWCAP-ASLL Aluminium-Elektrolytkondensatoren | Kapazität10 µF | – | – | – | Isolationswiderstand10 MΩ | – | Verpackung15" Tape & Reel | – | – | – | – | Endurance 2000 | Rippelstrom150 mA | Leckstrom3.5 µA | Verlustfaktor14 % | Durchmesser5 mm | Impedanz800 mΩ | Breite5.3 mm | – | – | – | – | – | – | – | – | Nennspannung35 V (DC) | – | – | Länge5.5 mm | MontageartV-Chip SMT | ||||
 | WCAP-ASLU Aluminium-Elektrolytkondensatoren, 10 µF, – | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWCAP-ASLU Aluminium-Elektrolytkondensatoren | Kapazität10 µF | – | – | – | Isolationswiderstand3.33333 MΩ | – | Verpackung15" Tape & Reel | – | – | – | – | Endurance 1000 | Rippelstrom23 mA | Leckstrom0.4 µA | Verlustfaktor22 % | Durchmesser4 mm | – | Breite4.3 mm | – | – | – | – | – | – | – | – | Nennspannung10 V (DC) | – | – | Länge5.5 mm | MontageartV-Chip SMT | ||||
 | WCAP-AT1H Aluminium-Elektrolytkondensatoren, 22 µF, – | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWCAP-AT1H Aluminium-Elektrolytkondensatoren | Kapazität22 µF | – | – | – | – | Raster5 mm | VerpackungAmmopack | – | – | – | – | Endurance 10000 | Rippelstrom632 mA | Leckstrom496 µA | Verlustfaktor20 % | Durchmesser13 mm | – | – | – | – | – | – | – | – | – | – | Nennspannung450 V (DC) | – | – | Länge25 mm | – | ||||
| WCAP-ASLU Aluminium-Elektrolytkondensatoren, 47 µF, – | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWCAP-ASLU Aluminium-Elektrolytkondensatoren | Kapazität47 µF | – | – | – | Isolationswiderstand2.12766 MΩ | – | Verpackung15" Tape & Reel | – | – | – | – | Endurance 1000 | Rippelstrom75 mA | Leckstrom3.3 µA | Verlustfaktor14 % | Durchmesser6.3 mm | – | Breite6.6 mm | – | – | – | – | – | – | – | – | Nennspannung35 V (DC) | – | – | Länge7.7 mm | MontageartV-Chip SMT | ||||
 | WE-CMB NiZn Stromkompensierte Netzdrossel, –, – | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-CMB NiZn Stromkompensierte Netzdrossel | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | Breite14.5 mm | Höhe22 mm | Nennstrom [1]10 A | – | – | Pins4 | Nennstrom10 A | Induktivität16 µH | Gleichstromwiderstand3 mΩ | Nennspannung250 V (DC) | Prüfspannung1500 V (AC) | MaterialNiZn | Länge18.5 mm | MontageartTHT | ||||
 | WE-LHMI SMT Speicherdrossel, –, – | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-LHMI SMT Speicherdrossel | – | – | – | – | – | – | – | Performance Nennstrom9.1 A | Sättigungsstrom 111.2 A | Sättigungsstrom @ 30%27.6 A | Eigenresonanzfrequenz45 MHz | – | – | – | – | – | – | Breite6.6 mm | Höhe2.8 mm | – | – | – | – | – | Induktivität1.5 µH | Gleichstromwiderstand15 mΩ | – | – | – | Länge7.3 mm | MontageartSMT | ||||
| WE-LHMI SMT Speicherdrossel, –, – | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-LHMI SMT Speicherdrossel | – | – | – | – | – | – | – | Performance Nennstrom12.8 A | Sättigungsstrom 113.3 A | Sättigungsstrom @ 30%30.9 A | Eigenresonanzfrequenz17 MHz | – | – | – | – | – | – | Breite12.6 mm | Höhe3.3 mm | – | – | – | – | – | Induktivität3.3 µH | Gleichstromwiderstand11 mΩ | – | – | – | Länge13.5 mm | MontageartSMT | ||||
 | 750030400 | Transformer, –, – | Downloads5 Dateien | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | Produktserie Transformer | – | – | – | – | – | – | VerpackungTape and Reel | – | – | – | – | – | – | – | – | – | – | Breite22.35 mm | Höhe8.89 mm | – | – | – | – | – | Induktivität10.65 µH | – | – | Prüfspannung500 V (AC) | – | Länge15.75 mm | MontageartSMT | ||
 | WP-THRBU REDCUBE THR with internal blind-hole thread, –, – | Simulation– | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | – | – | – | – | – | – | VerpackungLose | – | – | – | – | – | – | – | – | – | – | Breite7 mm | Höhe6 mm | – | InnengewindeM3 | Gewindelänge3.5 mm | Pins4 | Nennstrom50 A | – | – | – | – | MaterialMessing | – | MontageartTHR |