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Details
| Topologie | Abwärtswandler |
| Eingangsspannung | 12 V |
| Ausgang 1 | 1.4 V / 25 A |
| Ausgang 2 | 1.35 V / 17 A |
| IC-Revision | B2 |
Artikeldaten
Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | L(nH) | LR(nH) | IR(A) | ISAT,10%(A) | ISAT,30%(A) | RDC(mΩ) | fres(MHz) | Material | Muster | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | WE-HCM SMT-Hochstrominduktivität, 330 nH, 325 nH | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-HCM SMT-Hochstrominduktivität | Induktivität330 nH | Nenninduktivität325 nH | Nennstrom38 A | Sättigungsstrom 144.9 A | Sättigungsstrom @ 30%48.9 A | Gleichstromwiderstand0.32 mΩ | Eigenresonanzfrequenz28 MHz | MaterialMnZn |