IC-Hersteller Onsemi

IC-Hersteller (103)

Onsemi FDMQ8205A | Demoboard FDMQ8205A4PPOE90WGEVB

GreenBridge™ for Power over Ethernet (PoE)

Details

TopologieEintaktflusswandler
Eingangsspannung42.7-57 V
Ausgang 13.3 V / 27 A
IC-Revision1.0

Beschreibung

The GreenBridge™ FDMQ8205A evaluation board demonstrates the polarity protection bridge commonly used at the input of a Power over Ethernet (PoE) Power Device (PD). The protection bridge is used to protect the PD and make it insensitive to the polarity of a power source coupled to the PD. The PD itself may be sensitive to the polarity of the power source, but the bridge rectifier can be configured to provide the proper polarity to the device when the polarity of the power source is reversed. The GreenBridge™ can replace the conventional diode bridge and drastically reduce the power dissipation caused by the large voltage drop of a diode bridge, resulting in a high efficiency power device while not compromising the IEEE802.3at specification. The small package size of MLP4.5x5 reduces PCB area and increases power density.

Eigenschaften

Active MOSFET bridge with low forward drop to replace conventional diode bridge Self driving circuitry for MOSFETs Low rDS(on) 100V MOSFETs Maximizing available power and voltage IEEE802.3at compliant

  • Does not compromise PoE detection and classification
  • Small Backfeed voltage Works with 4-pair architecture for POE++ Enhanced thermal performance package of 4.5x5 mm MLP Wide operating voltage range up to 70 V

Typische Anwendungen

  • IP Phones,Thin Clients,Microcell,Femtocell,Point of Sales
  • LED lighting
  • Network Cameras,Wireless Access Points

Weiterführende Informationen

Artikeldaten

Artikel Nr.
Daten­blatt
Simu­lation
Downloads
Status
Produktserie
xPxC
Typ
Ports
Schirmung
Tab
EMI
Anwendungssystem
Arbeitsspannung(V (AC))
Verpackung
L(µH)
n
IR(A)
∫Udt(µVs)
VT(V (AC))
RDC 1(mΩ)
RDC 2(Ω)
Muster
WR-MJ Cat 3 Modular Jacks – THT, 8P8C, Horizontal
Simu­lation
Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre.
Anzahl der Pins (xPxC)8P8C 
TypHorizontal 
Ports1x1 
Schirmunggeschirmt 
Tab PositionUnten 
EMI FingerNein 
AnwendungssystemCAT 3 
Arbeitsspannung120 V (AC)
VerpackungTray 
Nennstrom1.5 A
WE-CST Stromwandler, –, –
Simu­lation
Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre.
Induktivität2000 µH
Übersetzungsverhältnis1:100 
Nennstrom20 A
Spannung-µSekunde50 µVs
Prüfspannung500 V (AC)
Gleichstromwiderstand 10.75 mΩ
Gleichstromwiderstand 25.5 Ω
749022016
10/100/1000 Base-T SMT Transformer, –, –
Simu­lation
Downloads
Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre.
Produktserie 10/100/1000 Base-T SMT Transformer
Ports
Induktivität350 µH
Prüfspannung1500 V (AC)