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Details
| Topologie | Sonstige Topologie |
| IC-Revision | 00 |
Beschreibung
I-MAX
Artikeldaten
Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | L(nH) | LR(nH) | IR(A) | ISAT,10%(A) | ISAT,30%(A) | RDC(mΩ) | fres(MHz) | Material | Muster | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | SPEC | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-HCM SMT-Hochstrominduktivität | Induktivität330 nH | Nenninduktivität305 nH | Nennstrom25 A | Sättigungsstrom 127.3 A | Sättigungsstrom @ 30%32 A | Gleichstromwiderstand0.37 mΩ | Eigenresonanzfrequenz35 MHz | MaterialMnZn |