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Microchip MIC2128YML | Demoboard MIC2128 HIGH POWER EVALUATION BOARD
MIC2128 HIGH POWER EVALUATION BOARD
Details
| Topologie | Abwärtswandler |
| Schaltfrequenz | 270-800 kHz |
| IC-Revision | 1 |
Beschreibung
The MIC2128 high current high power evaluation boards are intended to provide a reference design for customers to use the MIC2128 for higher output current and power capability.The MIC2128 Evaluation Boards were also developed to help engineers reduce product design cycle time and have an optimum platform to evaluate the high current high power capability of the MIC2128. The boards provide up to 10A output current suitable for many different applications
Eigenschaften
- Hyper Speed Control Architecture Enables:
- High Input to Output Voltage Conversion Ratio Capability
- Any Capacitor Stable
- Ultra-Fast Load Transient Response
- Wide 4.5V to 75V Input Voltage Range
- Adjustable Output Voltage from 0.6V to 30V
- 270 kHz to 800 kHz programmable Switching Frequency
- Built-in 5V Regulator for Single-Supply Operation
- Auxiliary Boost rap LDO for Improving System Efficiency
- Internal Boost rap Diode
- Adjustable Soft Start Time
- Enable Input and Power Good Output
- Programmable Current Limit
- Hiccup Mode Short-Circuit Protection
- Internal Compensation and Thermal Shutdown
- Supports Safe Stare-Up into a Pre biased Output
- AEC-Q100 Qualified(VAO suffix)
Typische Anwendungen
- Networking/Telecom, Equipent Base Station Servers
- Distributed Power Systems, Industrial Power Supplies, Automotive Power Supplies
Weiterführende Informationen
Artikeldaten
Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | L(µH) | IRP,40K(A) | ISAT,10%(A) | ISAT,30%(A) | RDC(mΩ) | fres(MHz) | Material | Pins | Typ | Montageart | L(mm) | H(mm) | IR(A) | Arbeitsspannung(V (AC)) | Betriebstemperatur | Muster | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | WE-HCI SMT-Hochstrominduktivität, 10 µH, 16.5 A | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-HCI SMT-Hochstrominduktivität | Induktivität10 µH | Performance Nennstrom16.5 A | Sättigungsstrom 110 A | Sättigungsstrom @ 30%21.5 A | Gleichstromwiderstand6.9 mΩ | Eigenresonanzfrequenz14 MHz | MaterialWE-PERM 2 | Pins2 | – | MontageartSMT | Länge18.3 mm | Höhe8.9 mm | – | – | Betriebstemperatur -40 °C up to +150 °C | ||||
 | WR-PHD Stiftleisten - Einreihig, –, – | Simulation– | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWR-PHD Stiftleisten - Einreihig | – | – | – | – | – | – | – | Pins2 | TypGerade | MontageartTHT | Länge5.08 mm | – | Nennstrom3 A | Arbeitsspannung250 V (AC) | Betriebstemperatur -40 °C up to +105 °C |