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ReferenzdesignMCP14628 | Demoboard Battery Charger Using an Inverse SEPIC Topology

Microchip MCP14628 | Demoboard Battery Charger Using an Inverse SEPIC Topology

2A Synchronous Buck Power MOSFET Driver

Details

TopologieSEPIC Buck-Boost Topologie
Ausgang 17.2 V
IC-RevisionA

Beschreibung

The MCP14628 is a dual MOSFET gate driver designed to optimally drive two N-Channel MOSFETs arranged in a non-isolated synchronous buck converter topology. With the capability to source 2A peaks typically from both the high-side and low-side drives,the MCP14628 is an ideal companion to buck controllers that lack integrated gate drivers. Additionally,greater design flexibility is offered by allowing the gate drivers to be placed close to the power MOSFETs.

Eigenschaften

  • Dual Output MOSFET Driver for Synchronous Applications
  • High Peak Output Current: 2A (typical)
  • Adaptive Cross Conduction Protection
  • Internal Bootstrap Blocking Device
  • +36V BOOT Pin Maximum Rating
  • Enhanced Light Load Efficiency Mode
  • Low Supply Current: 80 µA (typical)
  • High Capacitive Load Drive Capability:
  • 3300 pF in 10 ns (typical)
  • Tri-State PWM Pin for Power Stage Shutdown
  • Input Voltage Undervoltage Lockout Protection
  • Space Saving Packages:
  • 8-Lead SOIC
  • 8-Lead 3x3 DFN

Typische Anwendungen

  • Core Voltage Supplies for Microprocessors
  • High Efficient Synchronous DC/DC Buck Converters, High Current Low Output Voltage Synchronous DC/DC Buck Converters, High Input Voltage Synchronous DC/DC Buck Converters

Weiterführende Informationen

Artikeldaten

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Artikel Nr.
Daten­blatt
Simu­lation
Downloads
Status
Produktserie
L(µH)
IRP,40K(A)
ISAT,10%(A)
ISAT,30%(A)
RDC max.(mΩ)
fres(MHz)
Drahttype
MusterVerfügbarkeit & Muster
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7443631000
SPECWE-HCF SMT-Hochstrominduktivität, 10 µH, 16.15 A
Simu­lation
Verfügbarkeit
–
Downloads9 Dateien

Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre.
ProduktserieWE-HCF SMT-Hochstrominduktivität
Induktivität10 µH
Performance Nennstrom16.15 A
Sättigungsstrom 122 A
Sättigungsstrom @ 30%23 A
Gleichstromwiderstand8.76 mΩ
Eigenresonanzfrequenz13 MHz
DrahttypeFlach 
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