IC-Hersteller Microchip

IC-Hersteller (103)

Microchip ATA5795

Key Fob Design Based on Atmel ATA5795

Details

TopologieSonstige Topologie

Beschreibung

This application note introduces Atmel® ATA5795 as a building block to design a key fob with an integrated transponder and RKE functionality for the automotive industry.

Eigenschaften

  • Integrated key fob solution integrating MCU and a passive transponder functionality using Fc = 125kHz for immobilizer applications via a contactless LF interface and an RF transmitter functionality with programmable Fc = 300MHz to 433MHz for RKE applications
  • Transponder includes immobilizer SW stack supporting the immobilizer authentication protocol programmed at the factory
  • Open source immobilizer SW stack Is based on flexible communication protocol.
  • The protocol is configurable using transponder configuration memory
  • Immobilizer command set supports various classes of commands such as start authentication, read UID, read/write user memory, learn secret key1/2, and read transponder error status
  • Integrated high speed AES-128 hardware crypto module
  • Atmel ATA5795 includes segmented program and user data nonvolatile memories with protection locks
  • Ultra low power consumption enables passive transponder functionality at low coupling factors (k < 0.8% typ.)
  • Integrated RF transmitter module with selectable Fc using fractional PLL in ISM bands (315/430MHz)
  • Configurable radiated power output pout at up to +12.5dBm
  • Integrated flash-based Atmel ATmega 8-bit MCU includes ultra low-power design with many dedicated data communication and mixed-signal peripherals. Includes on-chip internal oscillators at 4MHz and 125kHz with RTC

Weiterführende Informationen

Artikeldaten

Artikel Nr.
Daten­blatt
Simu­lation
Downloads
Status
Produktserie
L(nH)
Tol. L
Testbedingung L
Qmin.
Testbedingung Q
RDC max.(Ω)
IR(mA)
fres(MHz)
Muster
WE-KI HC Hochstrom Keramik-SMT-Induktivität, 12 nH, ±2%
Simu­lation
Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre.
Induktivität12 nH
Induktivität±2% 
Induktivität250 MHz 
Güte30 
Güte250 MHz 
Gleichstromwiderstand0.115 Ω
Nennstrom1100 mA
Eigenresonanzfrequenz4100 MHz
WE-KI HC Hochstrom Keramik-SMT-Induktivität, 27 nH, ±2%
Simu­lation
Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre.
Induktivität27 nH
Induktivität±2% 
Induktivität250 MHz 
Güte35 
Güte250 MHz 
Gleichstromwiderstand0.2 Ω
Nennstrom780 mA
Eigenresonanzfrequenz2800 MHz