Inventchip Technology IV1Q12080T4

Beschreibung

High pressure BOOST conversion device is widely used in new energy, and is widely applied in areas such as new energy and energy battery, including high level before the sun booster charge and uninterrupted power supply dc bus voltage regulation, etc. When the total was higher than ups dc bus voltage regulation, etc. When the total was higher than ups dc bus voltage regulation, etc. When the total was higher than ups dc bus voltage regulation, etc. When the total was higher than ups dc bus voltage regulation, etc. When the total was higher than ups dc bus voltage regulation, etc. When the total was higher than ups dc bus voltage regulation, etc. When the total was higher than ups dc bus voltage regulation, etc.When the total was higher than ups dc bus voltage regulation, etc. When the total was higher than 600 v, are mainly used are mostly used at present is mainly the use of IGBT and SiC diodes switching diode switch group diode switch diode switch group and booster transform. However, because of the booster transform. However, because of the booster transform. However, because of the booster transform. However, because of the booster transform. However, because of the booster transform. However, due to the limitation of IGBT switching frequency, the limitation of switching frequency, the limitation of switching frequency, the limitation of switching frequency, control the current of the switch tube frequency is difficult to more than 20 KHZ. And SiC (SiC) (silicon carbide (SiC) mosfets under high frequency and pressure conditions, under the working condition of high frequency and pressure, under the working condition of high frequency and pressure, under the working condition of high frequency and pressure, under high frequency and pressure conditions, has a superior than IGBT switch features, its superior switch features, its superior switch features, its superior switch features, its superior switch features, its superior switch features, it can switch frequency switching frequency can switch frequency switching frequency can be easily pushed to 65 KHZ or higher or more easily, and obtain better efficiency, better efficiency at the same time, at the same time, better efficiency, better efficiency at the same time, also reduce the BOOST primary inductance inductive volume, heat dissipation and heat dissipation of EMI filter filter filter heat volume.This design is a reference is a 20 kw booster circuit, circuit, based on its efficiency, waveform and other tests to verify and demonstrate superior efficiency, waveform and other tests to verify and demonstrate superior efficiency, waveform and other tests to verify and demonstrate superior efficiency, waveform and other tests to verify and demonstrate superior efficiency, waveform and other tests to verify and demonstrate superior efficiency, waveform and other tests to verify and demonstrate superior efficiency, waveform and other tests to verify and demonstrate superior efficiency, waveform and other tests to verify and demonstrate superior efficiency, waveform and other tests to verify and demonstrate superior SiC MOSFET switch characteristics. Features. This design is a two phase staggered type crisscross pattern Boost circuit, each phase, use two using a two phase using two SiC MOSFET parallel and two parallel and two parallel diode in parallel, and two SiC diodes through this made by means of this kind of parallel way in such a way that makes SiC MOSFET and SiC diode diode can be used to can be used to more powerful. The occasion of more powerful. The occasion of more powerful.

Eigenschaften

• High blocking voltage with low on-resistance
• High speed switching with low capacitance
• High operating junction temperature capability
• Very fast and robust intrinsic body diode

Typische Anwendungen

• Motor drivers, High voltage DC/DC converters
• Solar inverters
• UPS, Switch mode power supplies

Weiterführende Informationen

• Produktseite des IC-Herstellers