IC-Hersteller Infineon Technologies
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Details
| Topologie | Abwärtswandler |
| Eingangsspannung | 12 V |
| Schaltfrequenz | 600-800 kHz |
| Ausgang 1 | 3.3 V / 30 A |
| IC-Revision | 2.0 |
Eigenschaften
- Vin = +12 V
- Vout = +3.3 V @ 0- 30 A
- Fs=600 kHz/800 kHz
- L= 470 nH (12.5 mm x 13 mm x 9 mm, DCR=0.165 mΩ)
- Cin= 10 x 22 µF (25 V, ceramic 0805) + 1 x 330 µF (25 V, electrolytic, optional)
- Cout=10 x 47 µF (6.3 V, ceramic 0805)
Typische Anwendungen
- Telecom and Datacom Applications, Server Applications, Storage Applications
- Distributed Point of Load Power Architectures
Weiterführende Informationen
Artikeldaten
Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | L(nH) | LR(nH) | IR(A) | ISAT,10%(A) | ISAT,30%(A) | RDC(mΩ) | fres(MHz) | Material | Muster | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | WE-HCM SMT-Hochstrominduktivität, 470 nH, 200 nH | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-HCM SMT-Hochstrominduktivität | Induktivität470 nH | Nenninduktivität200 nH | Nennstrom47.5 A | Sättigungsstrom 135.1 A | Sättigungsstrom @ 30%46.8 A | Gleichstromwiderstand0.165 mΩ | Eigenresonanzfrequenz22 MHz | MaterialMnZn |