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Infineon Technologies 2ED2101S06F | Demoboard EVAL-2ED2101-HB-LLC Main Board
2ED2101S06F & 2ED24427N01F in fast switching application
Details
| Topologie | LLC Resonanzwandler |
| IC-Revision | 1.0 |
Beschreibung
EVAL 2ED2101 HB-LLC is a fast-switching, resonant ZVS 200W LLC-converter power stage with active synchronous rectifier output stage. It is designed to showcase the use of high switching frequencies up to 500 kHz in an LLC converter design, which provide many system benefits such as lower EMI, reduced passive component size and footprint, as well as overall system size and BOM cost.
Eigenschaften
- Unique Infineon Thin-Film-Silicon On Insulator (SOI) technology
- Negative VS transient voltage immunity of - 100 V
- Floating channel designed for bootstrap operation
- Operating voltages (VS node) up to + 650 V
- Maximum bootstrap voltage (VB node) of + 675 V
- Integrated ultra-fast, low resistance bootstrap diode
- Logic operational up to –11 V on VS Pin
- Negative voltage tolerance on inputs of –5 V
- Independent under voltage lockout for both channels
- Schmitt trigger inputs with hysteresis
- 3.3 V, 5 V and 15 V input logic compatible
- Maximum supply voltage of 25 V
- DSO-8 package
- RoHS compliant
Typische Anwendungen
- LLC
Weiterführende Informationen
Artikeldaten
Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | λDom typ.(nm) | Emittierte Farbe | λPeak typ.(nm) | IV typ.(mcd) | VF typ.(V) | Chiptechnologie | 2θ50% typ.(°) | L(µH) | IRP,40K(A) | ISAT,10%(A) | ISAT,30%(A) | RDC(mΩ) | fres(MHz) | Material | B(mm) | H(mm) | IR 1(A) | Ti | Tl(mm) | Pins | Muster | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | WL-SMCW SMT Mono-color Chip LED Waterclear, 625 nm, Rot | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWL-SMCW SMT Mono-color Chip LED Waterclear | dominante Wellenlänge [typ.]625 nm | Emittierte FarbeRot | Spitzen-Wellenlänge [typ.]630 nm | Lichtstärke [typ.]150 mcd | Durchlassspannung [typ.]2 V | ChiptechnologieAlInGaP | Abstrahlwinkel Phi 0° [typ.]140 ° | – | – | – | – | – | – | – | Breite1.25 mm | Höhe0.7 mm | – | – | – | – | ||||
 | WE-HCI SMT-Hochstrominduktivität, –, – | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-HCI SMT-Hochstrominduktivität | – | – | – | – | – | – | – | Induktivität1.9 µH | Performance Nennstrom42.1 A | Sättigungsstrom 123 A | Sättigungsstrom @ 30%52 A | Gleichstromwiderstand1.2 mΩ | Eigenresonanzfrequenz51 MHz | MaterialWE-PERM 2 | Breite18.2 mm | Höhe8.9 mm | – | – | – | Pins2 | ||||
 | WP-BUTR REDCUBE PRESS-FIT with internal thread, two-rows, –, – | Simulation– | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | – | – | – | – | – | – | – | – | – | – | – | – | – | MaterialMessing | Breite9 mm | Höhe7 mm | Nennstrom [1]160 A | InnengewindeM4 | Gewindelänge6 mm | Pins8 | ||||
750344535 | Flyback Transformer, –, – | Simulation– | Downloads– | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | Produktserie Flyback Transformer | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – | – |