| Topologie | Sonstige Topologie |
| Schaltfrequenz | 350-580 kHz |
| IC-Revision | 1.0 |
EPC9153: 44–60 V Input, 12-20 V, 12.5 A Output up to 250 W High Efficiency, Thin Power Module for high performance computing systems.The EPC9153 demonstration board is a 60 V maximum input voltage, 12.5 A maximum output current, 12 - 20 V output voltage, thin synchronous buck converter.The EPC9153 features a GaN power stage using the EPC2218 and EPC2038 eGaN® FETs. The uP1966E gate driver that features high driving strength is used to drive the FETs. The synchronous bootstrap circuit ensures 4.9 V gate voltage is used for the high-side gate drive. Digital control that allows sub-10 ns dead-time and flexibility in control scheme development is employed. In order to optimize the efficiency, two small on-board switch-mode power supply circuits are used to generate the housekeeping 5 V and 3.1 V voltages for the gate driver and the digital controller respectively.
Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | L(µH) | IR(A) | ISAT(A) | fres(MHz) | Montageart | C | VR(V (DC)) | Endurance(h) | IRIPPLE(mA) | Z(mΩ) | ILeak(µA) | DF(%) | Ø D(mm) | L(mm) | Verpackung | Muster | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() | WE-TPC SMT-Speicherdrossel, 3.3 µH, 2.15 A | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-TPC SMT-Speicherdrossel | Induktivität3.3 µH | Nennstrom2.15 A | Sättigungsstrom1.8 A | Eigenresonanzfrequenz80 MHz | MontageartSMT | – | – | – | – | – | – | – | – | Länge4.8 mm | – | ||||
![]() | 750342104 | Transformer, 1350 µH, – | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | Produktserie Transformer | Induktivität1350 µH | – | – | – | MontageartTHT | – | – | – | – | – | – | – | – | Länge16.9 mm | VerpackungTray | |||
![]() | WCAP-ASLI Aluminium-Elektrolytkondensatoren, –, – | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWCAP-ASLI Aluminium-Elektrolytkondensatoren | – | – | – | – | MontageartV-Chip SMT | Kapazität100 µF | Nennspannung35 V (DC) | Endurance 2000 | Rippelstrom300 mA | Impedanz380 mΩ | Leckstrom35 µA | Verlustfaktor14 % | Durchmesser6.3 mm | Länge7.7 mm | Verpackung15" Tape & Reel |