EPC MCP1703 | Demoboard EPC90123

Beschreibung

The EPC90123 development board is a 100 V maximum device voltage,25|A maximum output current, half bridge featuring the EPC2218 GaN field effect transistor (FET). The purpose of this development board is to simplify the evaluation process of the EPC2218 by including all the critical components on a single board that can be easily connected into the majority of existing converter topologies.The EPC90123 development board measures 2” x 2” and contains two EPC2218 GaN FETs and one EPC2038 GaN FET in a half bridge configuration with the uPI Semiconductor uP1966E gate driver. The board also contains all critical components and the layout supports optimal switching performance. There are also various probe points to facilitate simple waveform measurement and efficiency calculation. A block diagram of the circuit is given in figure 1.For more information on EPC2218 and EPC2038 please refer to their datasheets available from EPC at www.epc-co.com. The datasheet should be read in conjunction with this quick start guide.

Typische Anwendungen

Weiterführende Informationen

• Datenblatt
• Produktseite des IC-Herstellers