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EPC EPC9105

Demonstration Board EPC9105 Quick Start Guide

Details

TopologieAufwärtswandler
Eingangsspannung36-60 V
Ausgang 130 V

Beschreibung

The EPC9105 demonstration board is a nominal 48 V input, 12 V output,1.2 MHz resonant intermediate bus converter (IBC) with a 30A maximum output current and 36 V to 60 V input voltage range.The demonstration board features the EPC2001 (100 V rated) andEPC2015 (40 V rated) enhancement mode on silicon field effect transistors(eGaN® FETs) as well as the first eGaN FET specific integratedcircuit driver – the Texas Instruments LM5113. The EPC9105 board isintended to showcase the performance that can be achieved usingthe eGaN FETs and eGaN driver together in high frequency resonantapplications.The EPC9105 demonstration board’s active area is 1.18 x 1.76 inches,designed to occupy the same board area as a standard eighth brickconverter. The demonstration board is oversized to allow connec-tions for bench evaluation. The additional board area outside of theactive IBC area contains a minimum number of connections to ensurean accurate thermal profile of the eGaN FET based IBC.There are various probe points to facilitate simple waveform measurementsand efficiency calculations. For more information on theEPC2001 or EPC2015 eGaN FETs, or the LM5113 driver, please referto the datasheets available from EPC at www.epc-co.com and www.TI.com. For more detailed circuit information, see the block diagramsin figure 1, figure 2, and the demonstration board schematic

Weiterführende Informationen

Artikeldaten

Artikel Nr.
Daten­blatt
Simu­lation
Downloads
Status
Produktserie
L(nH)
LR(nH)
IR(A)
ISAT,10%(A)
ISAT,30%(A)
RDC(mΩ)
fres(MHz)
Material
Muster
WE-HCM SMT-Hochstrominduktivität, 105 nH, 104 nH
Simu­lation
Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre.
Induktivität105 nH
Nenninduktivität104 nH
Nennstrom30 A
Sättigungsstrom 145 A
Sättigungsstrom @ 30%51 A
Gleichstromwiderstand0.235 mΩ
Eigenresonanzfrequenz70 MHz
MaterialMnZn