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EPC EPC90135 | Demoboard EPC90135

EPC90135: 80 V, 45 A GaN-based half-bridge development board

Details

TopologieHalf-Bridge Converter Nonisolated
Eingangsspannung80 V
IC-Revision1

Beschreibung

The EPC90135 development board with onboard gate driver, features the 100 V rated EPC2218 eGaN® FET. The purpose of this board is to simplify the evaluation process of paralleled EPC2218’s for high current operation by including all the critical components on a single board that can be easily integrated into most existing converter topologies.The EPC90135 development board measures 2” x 2” and contains eight EPC2218 GaN FETs in four half bridge configurations. The EPC90135 features the uPI Semiconductor uP1966E gate driver. The board contains all critical components, and the layout supports optimal switching performance. There are also various probe points to facilitate simple waveform measurement and efficiency calculation.

Typische Anwendungen

Weiterführende Informationen

Artikeldaten

Artikel Nr. Daten­blatt Downloads Status ProduktserieL
(mm)
TiØ OD
(mm)
Ø ID
(mm)
VerpackungVPE Muster
9774010243RSPEC
6 Dateien Aktiv i| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre.WA-SMSI SMT Stahl Spacer mit Innengewinde M2 1 M2 4.35 2.8 Tape and Reel 1500
Artikel Nr. Daten­blatt
9774010243RSPEC
Muster
Artikel Nr. Daten­blatt Downloads Status ProduktserieL
(mm)
TiØ OD
(mm)
Ø ID
(mm)
VerpackungVPE Muster