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Details
| Topologie | Gegentaktwandler (Halbbrücken) |
| Eingangsspannung | 52 V |
| Ausgang 1 | 65 V / 2.7 A |
Beschreibung
The EPC9067 development board that can be configured as either a buck converter or a ZVS class-D amplifier. The synchronous bootstrap gate drive enables high efficiency and high frequency operation, up to 15 MHz.The EPC9067 is a 65 V maximum device voltage, 2.7 A maximum output current, half bridge with onboard gate drives, featuring the EPC8009 enhancement mode (eGaN®) field effect transistor (FET). The gate driver has been configured with a synchronous FET bootstrap circuit featuring the EPC2038 eGaN FET that eliminates high side device losses induced by the reverse recovery losses of the internal bootstrap diode of the gate driver.
Weiterführende Informationen
Artikeldaten
Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | L(µH) | IRP,40K(A) | ISAT,10%(A) | ISAT,30%(A) | RDC(mΩ) | fres(MHz) | Material | Muster | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | WE-HCI SMT-Hochstrominduktivität, 10 µH, 5.3 A | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-HCI SMT-Hochstrominduktivität | Induktivität10 µH | Performance Nennstrom5.3 A | Sättigungsstrom 11.8 A | Sättigungsstrom @ 30%4 A | Gleichstromwiderstand33 mΩ | Eigenresonanzfrequenz40 MHz | MaterialSuperflux |