IC-Hersteller Diodes Incorporated
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Details
| Topologie | Abwärtswandler |
| Eingangsspannung | 4.5-40 V |
| Schaltfrequenz | 1000 kHz |
| IC-Revision | 1 |
Beschreibung
The AL8860EV2, Figure 1, is a double sided evaluation board for the AL8860 step-down, or ‘buck’, LED driver with internal switch. The evaluation board is preset to drive 1.5A into a single LED, or multiple LEDs, the maximum number of which depends on their total forward voltage drop and the supply voltage. (The maximum drive current of the AL8860 is 1.5A)
Eigenschaften
- Low BOM Counts
- Wide Input Voltage Range: 4.5V to 40V
- Output Current up to 1.5A
- Internal 40V NDMOS Switch
- Typical 5% Output Current Accuracy
- Single Pin for On/Off and Brightness Control by DC Voltage or PWM Signal
- Recommended Analog Dimming Range: 5% ~100%
- Soft-Start
- High Efficiency (Up to 97%)
- LED Short Protection
- Inherent Open-Circuit LED Protection
- Over Temperature Protection (OTP)
- Up to 1MHz Switching Frequency
- Pb-free TSOT25 and MSOP-8EP Packages
Typische Anwendungen
- External Driver with Multiple Channels
- LED Retrofit for Low Voltage Halogen / LED Backlighting / Low Voltage Industrial Lighting / Illuminated Signs
Weiterführende Informationen
Artikeldaten
Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | L(µH) | IRP,40K(A) | ISAT(A) | RDC max.(mΩ) | fres(MHz) | Bauform | Version | Muster | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | WE-PD SMT-Speicherdrossel, 22 µH, 6 A | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-PD SMT-Speicherdrossel | Induktivität22 µH | Performance Nennstrom6 A | Sättigungsstrom3.7 A | Gleichstromwiderstand36 mΩ | Eigenresonanzfrequenz13.5 MHz | Bauform1260 | VersionGestanzt | ||||
| WE-PD SMT-Speicherdrossel, 33 µH, 4.6 A | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-PD SMT-Speicherdrossel | Induktivität33 µH | Performance Nennstrom4.6 A | Sättigungsstrom3 A | Gleichstromwiderstand57 mΩ | Eigenresonanzfrequenz11 MHz | Bauform1260 | VersionGestanzt | ||||
| WE-PD SMT-Speicherdrossel, 47 µH, 4.1 A | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-PD SMT-Speicherdrossel | Induktivität47 µH | Performance Nennstrom4.1 A | Sättigungsstrom2.6 A | Gleichstromwiderstand77 mΩ | Eigenresonanzfrequenz9.2 MHz | Bauform1260 | VersionGestanzt | ||||
| WE-PD SMT-Speicherdrossel, 68 µH, 3.55 A | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-PD SMT-Speicherdrossel | Induktivität68 µH | Performance Nennstrom3.55 A | Sättigungsstrom2.2 A | Gleichstromwiderstand105 mΩ | Eigenresonanzfrequenz7.6 MHz | Bauform1260 | VersionGestanzt | ||||
| WE-PD SMT-Speicherdrossel, 100 µH, 2.8 A | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-PD SMT-Speicherdrossel | Induktivität100 µH | Performance Nennstrom2.8 A | Sättigungsstrom1.7 A | Gleichstromwiderstand160 mΩ | Eigenresonanzfrequenz6.6 MHz | Bauform1260 | VersionGestanzt | ||||
| WE-PD SMT-Speicherdrossel, 150 µH, 2.3 A | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-PD SMT-Speicherdrossel | Induktivität150 µH | Performance Nennstrom2.3 A | Sättigungsstrom1.45 A | Gleichstromwiderstand220 mΩ | Eigenresonanzfrequenz4.4 MHz | Bauform1260 | VersionGestanzt | ||||
| WE-PD SMT-Speicherdrossel, 220 µH, 1.85 A | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-PD SMT-Speicherdrossel | Induktivität220 µH | Performance Nennstrom1.85 A | Sättigungsstrom1.2 A | Gleichstromwiderstand340 mΩ | Eigenresonanzfrequenz3.8 MHz | Bauform1260 | VersionGestanzt |