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Details
| Topologie | Sonstige Topologie |
| IC-Revision | A |
Beschreibung
In higher-power class-D amplifiers, generally above 10 W of output power, a filter on the output of theamplifier is required. The filter is passive in nature and uses both an inductor and a capacitor on eachoutput terminal. Therefore, it is referred to as an LC filter. Proper component selection of the LC filter iscritical to meet the desired audio performance, efficiency, EMC/EMI requirements, and cost for the endapplication. This application report serves as a guide to aid in the section of LC filter components forclass-D amplifiers to meet target-design goals of the end system.
Weiterführende Informationen
Artikeldaten
| Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | L (µH) | IRP,40K (A) | ISAT,10% (A) | ISAT,30% (A) | RDC (mΩ) | fres (MHz) | Material | RDC max. (mΩ) | Drahttype | Muster | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | 7443556680 | SPEC | 9 Dateien | Aktiv i| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | WE-HCI SMT-Hochstrominduktivität | 6.8 | 22 | 13 | 27 | 4.1 | 24 | WE-PERM 2 | 4.428 | – | ||
 | 7443630700 | SPEC | 9 Dateien | Aktiv i| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | WE-HCF SMT-Hochstrominduktivität | 7 | 19.5 | 27 | 30 | 5.61 | 18 | MnZn | 6.17 | Flach | ||
| 7443551730 | SPEC | 9 Dateien | Aktiv i| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | WE-HCI SMT-Hochstrominduktivität | 7.3 | 16.5 | 5.5 | 12 | 5.9 | 28 | WE-PERM | 6.49 | – | ||
| 7443557760 | SPEC | 9 Dateien | Aktiv i| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | WE-HCI SMT-Hochstrominduktivität | 7.6 | 22.8 | 19 | 22 | 3.75 | 20 | MnZn | 4 | – | ||
| 74435561100 | SPEC | 9 Dateien | Aktiv i| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | WE-HCI SMT-Hochstrominduktivität | 10 | 16.5 | 10 | 21.5 | 6.9 | 14 | WE-PERM 2 | 7.452 | – | ||
| 74435571100 | SPEC | 9 Dateien | Aktiv i| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | WE-HCI SMT-Hochstrominduktivität | 10 | 16.4 | 8.8 | 18.5 | 6.9 | 16 | MnZn | 7.45 | – | ||
| 7443631000 | SPEC | 9 Dateien | Aktiv i| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | WE-HCF SMT-Hochstrominduktivität | 10 | 16.15 | 22 | 23 | 7.96 | 13 | MnZn | 8.76 | Flach |
| Artikel Nr. | Datenblatt | Simulation | |
|---|---|---|---|
| 7443556680 | SPEC | |
| 7443630700 | SPEC | |
| 7443551730 | SPEC | |
| 7443557760 | SPEC | |
| 74435561100 | SPEC | |
| 74435571100 | SPEC | |
| 7443631000 | SPEC |
| Muster |
|---|
| Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | L (µH) | IRP,40K (A) | ISAT,10% (A) | ISAT,30% (A) | RDC (mΩ) | fres (MHz) | Material | RDC max. (mΩ) | Drahttype | Muster |
|---|
