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AnDAPT Inc AmP8DB6QF65 | Demoboard ARD_X_ZUR_A1_IC1
Zynq UltraScale+ RFSoC Gen1, Gen2, Gen3 (Mandatory Power)
Details
| Topologie | Abwärtswandler |
| Eingangsspannung | 12 V |
| Ausgang 1 | 0.85 V / 45 A |
| IC-Revision | 1 |
Beschreibung
The ARD_X_ZUR_A1 is a scalable power supply designed to provide power to Xilinx Zynq UltraScale+ (ZU+) RFSoC Gen1 Gen2 Gen3 device mandatory rails. The design is scalable to support the most basic ZU21DR device in Gen1 Gen2 Gen3 family with RF data converters integrated on a hardware programmable SoC using a quad-core Arm Cortex-A53 MPCore application processor and dual-core Arm Cortex-R5 MPCore real-time processor to ZU29DR devices.
Eigenschaften
- AmPMIC enables programmable custom PMIC
- Integrate application targeted Power Components
- Power Blocks for a variety of topologies
- Scalable Integrated N-channel MOSFETs (SIM)
- Current sense for protection, telemetry, regulation
- Build Switching topologies - Buck, Boost, Buck-Boost
- Build Linear topologies - LDO, Load Switch
- Analog fabric connectivity for sensor signals
- Digital μLogic fabric connectivity: Analog/Digital Blocks
- Industry first: Analog Proficiency - Digital Flexibility
Typische Anwendungen
- Power Component Integrator, Digital power management IC
Weiterführende Informationen
Artikeldaten
Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | C | Tol. C | VR(V (DC)) | Bauform | Betriebstemperatur | DF(%) | RISO | Keramiktyp | L(mm) | B(mm) | H(mm) | Fl(mm) | Verpackung | L(µH) | LR(µH) | IR(A) | ISAT,10%(A) | ISAT,30%(A) | RDC(mΩ) | fres(MHz) | Material | Muster | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| WCAP-CSGP MLCCs 6.3 V(DC), 47 µF, ±20% | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWCAP-CSGP MLCCs 6.3 V(DC) | Kapazität47 µF | Kapazität±20% | Nennspannung6.3 V (DC) | Bauform1210 | Betriebstemperatur -55 °C up to +85 °C | Verlustfaktor10 % | Isolationswiderstand0.002 GΩ | KeramiktypX5R Klasse II | Länge3.2 mm | Breite2.5 mm | Höhe2.5 mm | Pad Dimension0.75 mm | Verpackung7" Tape & Reel | – | – | – | – | – | – | – | – | |||||
 | WE-HCM SMT-Hochstrominduktivität, –, – | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-HCM SMT-Hochstrominduktivität | – | – | – | Bauform1088 | Betriebstemperatur -40 °C up to +125 °C | – | – | – | Länge10.2 mm | Breite8 mm | Höhe8.1 mm | Pad Dimension2.5 mm | – | Induktivität0.1 µH | Nenninduktivität0.099 µH | Nennstrom60 A | Sättigungsstrom 1107.3 A | Sättigungsstrom @ 30%114.1 A | Gleichstromwiderstand0.18 mΩ | Eigenresonanzfrequenz94 MHz | MaterialMnZn |