IC-Hersteller Analog Devices

IC-Hersteller (103)

Analog Devices MAX20830

30A, 2MHz, 2.7V to 16V Integrated Step-Down Switching Regulator with PMBus

Details

TopologieAbwärtswandler
Eingangsspannung2.7-16 V
Schaltfrequenz500-2000 kHz
Ausgang 15.8 V / 30 A
IC-Revision1

Beschreibung

The MAX20830/MAX20830T are fully integrated, highlyefficient, step-down DC-DC switching regulators with aPMBus interface. The devices operate from 2.7V to 16Vinput supplies, and the output can be adjusted from 0.4Vto 5.8V, delivering up to 30A of load current.The switching frequency of the devices can be configured from 500kHz to 2MHz to provide the capability of optimizing the design in terms of size and performance

Eigenschaften

  • High Power Density with Low Component Count
  • Compact 4.3mm x 6.55mm, 16-Pin FC2QFNPackage
  • Internal Compensation
  • Single Supply Operation with Integrated LDO for Bias Generation
  • Wide Operating Range
  • 2.7V to 16V Input Voltage Range
  • 0.4V to 5.8V Output Voltage Range
  • 500kHz to 2MHz Configurable Switching Frequency
  • -40°C to +125°C Junction Temperature Range
  • Optimized Performance and Efficiency
  • 94.5% Peak Efficiency with VDDH = 12V and VOUT = 1.8V
  • High Efficiency with Optional External Bias Input Supply
  • AMS to Improve Load-Transient Response
  • Differential Remote Sense
  • PMBus Interface
  • Adaptive Voltage Scaling of 0.4V to 0.8VReference Range
  • PMBus Telemetry of Output Current, Output Voltage, Input Voltage, and Junction Temperature

Typische Anwendungen

  • Communications Equipment, Networking Equipment,
  • Data Center Power, Servers and Storage, Point-of-Load Voltage Regulators

Weiterführende Informationen

Artikeldaten

Artikel Nr.
Daten­blatt
Simu­lation
Downloads
Status
Produktserie
L(nH)
LR(nH)
IR(A)
ISAT,10%(A)
ISAT,30%(A)
RDC(mΩ)
fres(MHz)
Material
Muster
WE-HCM SMT-Hochstrominduktivität, 330 nH, 310 nH
Simu­lation
Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre.
Induktivität330 nH
Nenninduktivität310 nH
Nennstrom47.5 A
Sättigungsstrom 158 A
Sättigungsstrom @ 30%65.7 A
Gleichstromwiderstand0.165 mΩ
Eigenresonanzfrequenz28 MHz
MaterialMnZn 
WE-HCM SMT-Hochstrominduktivität, 470 nH, 200 nH
Simu­lation
Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre.
Induktivität470 nH
Nenninduktivität200 nH
Nennstrom47.5 A
Sättigungsstrom 135.1 A
Sättigungsstrom @ 30%46.8 A
Gleichstromwiderstand0.165 mΩ
Eigenresonanzfrequenz22 MHz
MaterialMnZn