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Analog Devices MAX17225 | Demoboard MAX17225 Evaluation Kit
400mV to 5.5V Input, nanoPower Synchronous Boost Converters with True Shutdown
Details
| Topologie | Aufwärtswandler |
| Eingangsspannung | 0.4-5.5 V |
| Ausgang 1 | 5 V / 0.43 A |
| Ausgang 2 | 3 V / 0.43 A |
| IC-Revision | 2 |
Beschreibung
The MAX17225 evaluation kit (EV kit) evaluates theMAX17220–MAX17225 IC family of ultra-low quiescent current step-up DC-DC converters. The MAX17225 EVkit features two independent circuits to evaluate two different IC packages of the MAX17220–MAX17225 family. Both circuits on the EV kit operate over an input range of 400mV to 5.5V, depending on load, with 0.88V typical startup with 3kΩ load. Each circuit provides resistor-configurable output voltages from 1.8V to 5V in 100mV/step.
Eigenschaften
- Two Independent Circuits on One Board
- Evaluates the MAX17220–MAX17225 IC Family ina 6-pin μDFN
- Evaluates the MAX17220–MAX17225 IC Family ina 6-pin Wafer-Level Package (WLP)
- 400mV to 5.5V Input Range
- 1.8V to 5V Configurable Output Voltage in100mV/step
- Up to 100mA/225mA/425mA Output Current
- Proven 2-Layer 1oz Copper PCB Layout
- Demonstrates Compact Solution Size
- Fully Assemble and Tested
Typische Anwendungen
- Optical Heart-Rate Monitoring (OHRM) LED Drivers
- Low-Power Wireless Communication Products
- Battery-Powered Medical Equipment
- Supercapacitor Backup for Real-Time Clock (RTC)/Alarm Buzzers
- Tiny, Low-Power IoT Sensors
- Primary-Cell Portable Systems ; Secondary-Cell Portable Systems, Wearable Devices
Weiterführende Informationen
Artikeldaten
Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | L(µH) | IR(A) | ISAT1(A) | ISAT2(A) | RDC max.(mΩ) | fres(MHz) | IRP,40K(A) | ISAT,30%(A) | RDC typ.(mΩ) | VOP(V) | Montageart | Muster | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | WE-PMCI Power Molded Chip Induktivität, 2.2 µH, 3.65 A | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-PMCI Power Molded Chip Induktivität | Induktivität2.2 µH | Nennstrom3.65 A | Sättigungsstrom 12.25 A | Sättigungsstrom 24.8 A | Gleichstromwiderstand75 mΩ | Eigenresonanzfrequenz35 MHz | Performance Nennstrom3.65 A | Sättigungsstrom @ 30%4.8 A | Gleichstromwiderstand70 mΩ | – | MontageartSMT | ||||
 | WE-MAPI SMT-Speicherdrossel, 2.2 µH, 5.2 A | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-MAPI SMT-Speicherdrossel | Induktivität2.2 µH | Nennstrom5.2 A | – | – | Gleichstromwiderstand26 mΩ | Eigenresonanzfrequenz35 MHz | Performance Nennstrom7.1 A | Sättigungsstrom @ 30%9.2 A | Gleichstromwiderstand22 mΩ | Betriebsspannung80 V | MontageartSMT |