IC-Hersteller (103)
- Alle Hersteller
Analog Devices
Infineon Technologies
Microchip
Onsemi
Renesas
ROHM
STMicroelectronics
Texas Instruments
- 3peak incorporated (27)
- Ablic (23)
- Acco Semiconductor (1)
- Advanced Power (4)
- Allegro Microsystems (97)
- Alpha & Omega Semiconductor (37)
- AnalogySemi (3)
- AnDAPT Inc (199)
- Anpec (13)
- AXElite (2)
- Backward (6)
- Bright Power Semiconductor (1)
- Broadcom (45)
- Cambridge GaN Devices (18)
- Chipanalog Micro (10)
- Cologne Chips (1)
- Convenient Power (1)
- Dialog Semiconductor (12)
- Diodes Incorporated (246)
- Divimath (8)
- Elmos AG (1)
- EPC (135)
- e-Peas Semiconductors (1)
- Eta Solutions Co. Ltd. (9)
- GaN Systems (8)
- GaNPower (3)
- Giantec (1)
- Gstek Wuxi (1)
- Helix Semiconductor (7)
- IKON (1)
- Indie Semiconductor (8)
- Innovision Semiconductor Inc (2)
- Intel (68)
- Inventchip Technology (3)
- ISSI (51)
- JoulWatt (20)
- KDPOF (3)
- Kinetic Technology (13)
- Lattice semiconductor Corporation (20)
- Littelfuse (1)
- Lumissil Microsystems (8)
- M3 Technology (M3Tek) (7)
- Macnica (22)
- Marvell Semiconductor (1)
- MaxLinear (178)
- Menlo Micro (1)
- MikroE (21)
- MindCet (2)
- Monolithic Power Systems (968)
- Navitas Semiconductor Inc (6)
- NewEdge Technologies, Inc. (1)
- Nexperia (35)
- Nisshinbo Micro Device Inc. (10)
- Nordic Semiconductor (1)
- Novosense Micro (1)
- NXP (320)
- O2 Micro International Ltd (10)
- On Bright (7)
- Panasonic (2)
- PN Junction Semiconductor (2)
- Power Integrations (114)
- Powermat (1)
- Pulsiv (19)
- Qorvo (95)
- Realsil SuRealsil(tek) Microelectronics (1)
- Richtek (297)
- Sanken Electric Co., Ltd. (16)
- Sckipio (6)
- Semtech (87)
- SG-Micro (46)
- Silanna Semiconductor (9)
- Silergy Corporation (30)
- Silicon Laboratory Inc. (100)
- Silicontent Technology (59)
- Silvertel (60)
- Skycore Semiconductors (1)
- Skyworks (33)
- Southchip (8)
- Summit Wireless (1)
- Tagore Tech (7)
- Taiwan Semiconductor (1)
- TDK Corporation (1)
- Tempo Semiconductor (1)
- Torex (37)
- Toshiba (25)
- Transphorm (21)
- TransSIP (2)
- Union (21)
- uPI Semiconductor (2)
- Valens Semiconductor (30)
- Wise Integration (1)
- Wolfspeed (20)
- Xilinx (22)
- XL Semiconductor (3)
- XYSemi (62)
Analog Devices LTM8060F | Demoboard DC2820A-B
LTM8060F: Quad 40VIN, 3A Silent Switcher μModule Regulator with Package-Level EMI Shield
Details
| Topologie | Abwärtswandler |
| Eingangsspannung | 5.4-40 V |
| Schaltfrequenz | 400-1200 kHz |
| Ausgang 1 | 1.2 V / 3 A |
| Ausgang 2 | 1.5 V / 3 A |
| Ausgang 3 | 3.3 V / 3 A |
| Ausgang 4 | 5 V / 3 A |
| IC-Revision | A |
Beschreibung
The DC2820A-B evaluation board features the LTM®8060F, a quad output high-performance step-down Silent Switcher® power μModule® regulator in a thermally enhanced 16mm × 11.9mm × 2.9mm pre-soldered grid array (PSGA) package with a package-level electromagnetic interference (EMI) shield. The DC2820A-B has a wide operating input voltage range of 5.4V to 40V. The output rails are configured for 5V, 3.3V, 1.5V, and 1.2V. They are resistor programmable from 0.8V to 8V. Each output can provide up to 3A, and phases can also be paralleled together to satisfy higher rail current requirements.
Eigenschaften
Package-Level EMI ShieldingMinimize Near-Field Electric Field NoiseReduce Near-Field Magnetic Field NoisePin-to-Pin Compatible with the LTM8060Four Complete 3A (4A peak) Step-Down SwitchingPower SuppliesLow Noise Silent Switcher ArchitectureCompliant with CISPR22 Class B/CISPR25 Class 5Wide Input Voltage Range: 3V to 40VWide Output Voltage Range: 0.8V to 8V4A Continuous Output Current per Channel at 12VIN,3.3VOUT, fSW = 2MHz, TA = 60°CMultiphase or Multi-module Parallelable forIncreased Output CurrentLow Thermal Resistance, θJA = 8.4°C/W,θJCtop = 4.6°C/W, θJCbot = 1°C/WSelectable Switching Frequency: 200kHz to 3MHzAvailable in a Compact 165-Pin, 16mm × 11.9mm ×2.9mm, Pre-Soldered Grid Array (PSGA) Package
Typische Anwendungen
Weiterführende Informationen
Artikeldaten
| Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | C | Tol. C | VR (V (DC)) | Bauform | Betriebstemperatur | Q (%) | DF (%) | RISO | Keramiktyp | L (mm) | W (mm) | Fl (mm) | Verpackung | L (µH) | IRP,40K (A) | ISAT,10% (A) | ISAT,30% (A) | RDC max. (mΩ) | fres (MHz) | Montageart | Z @ 100 MHz (Ω) | Zmax (Ω) | Testbedingung Zmax | IR (mA) | Z @ 1 GHz (Ω) | H (mm) | Typ | Muster | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | 885012206028 | SPEC | 9 Dateien | Aktiv i| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | WCAP-CSGP MLCCs 16 V(DC) | 100 pF | ±10% | 16 | 0603 | -55 °C up to +125 °C | – | 3.5 | 10 GΩ | X7R Klasse II | 1.6 | 0.8 | 0.4 | 7" Tape & Reel | – | – | – | – | – | – | – | – | – | – | – | – | 0.8 | – | ||
| 885012206055 | SPEC | 9 Dateien | Aktiv i| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | WCAP-CSGP MLCCs 25 V(DC) | 220 pF | ±10% | 25 | 0603 | -55 °C up to +125 °C | – | 3.5 | 10 GΩ | X7R Klasse II | 1.6 | 0.8 | 0.4 | 7" Tape & Reel | – | – | – | – | – | – | – | – | – | – | – | – | 0.8 | – | ||
| 885012006043 | SPEC | 9 Dateien | Aktiv i| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | WCAP-CSGP MLCCs 25 V(DC) | 680 pF | ±5% | 25 | 0603 | -55 °C up to +125 °C | 1000 | – | 10 GΩ | NP0 Klasse I | 1.6 | 0.8 | 0.4 | 7" Tape & Reel | – | – | – | – | – | – | – | – | – | – | – | – | 0.8 | – | ||
 | 74279226101 | SPEC | 10 Dateien | Aktiv i| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | WE-MPSB EMI Multilayer Power Suppression Bead | – | – | – | 1812 | -55 °C up to +125 °C | – | – | – | – | 4.5 | 3.2 | 0.46 | – | – | – | – | – | 6 | – | SMT | 100 | 160 | 1100 MHz | 8000 | 150 | 2.3 | Hochstrom | ||
 | 744373240022 | SPEC | 9 Dateien | Aktiv i| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | WE-LHMI SMT Speicherdrossel | – | – | – | 4020 | -40 °C up to +125 °C | – | – | – | – | 4.45 | 4.06 | – | – | 0.22 | 11.4 | 10.8 | 22.3 | 7.3 | 195 | SMT | – | – | – | – | – | 1.8 | – |
| Artikel Nr. | Datenblatt | Simulation | |
|---|---|---|---|
| 885012206028 | SPEC | |
| 885012206055 | SPEC | |
| 885012006043 | SPEC | |
| 74279226101 | SPEC | |
| 744373240022 | SPEC |
| Muster |
|---|
| Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | C | Tol. C | VR (V (DC)) | Bauform | Betriebstemperatur | Q (%) | DF (%) | RISO | Keramiktyp | L (mm) | W (mm) | Fl (mm) | Verpackung | L (µH) | IRP,40K (A) | ISAT,10% (A) | ISAT,30% (A) | RDC max. (mΩ) | fres (MHz) | Montageart | Z @ 100 MHz (Ω) | Zmax (Ω) | Testbedingung Zmax | IR (mA) | Z @ 1 GHz (Ω) | H (mm) | Typ | Muster |
|---|
