IC-Hersteller Analog Devices

IC-Hersteller (103)

Analog Devices LTC7852

Dual Output, 6-Phase,Multiphase Current Mode Synchronous Controller with Current Monitoring

Details

TopologieAbwärtswandler
Eingangsspannung5-13 V
Schaltfrequenz250-1200 kHz
Ausgang 11.2 V / 60 A
Ausgang 21 V / 200 A
Ausgang 30.9 V / 120 A

Beschreibung

The LTC®7852/LTC7852-1 is a six-phase, dual outputcurrent mode synchronous step-down switching regulatorcontroller that works in conjunction with externalpower train devices such as DrMOS, power blocks ordiscrete N-channel MOSFETs and associated gate drivers.Its flexible design enables 1-, 2-, 3-, 4-, 5-, and 6-phaseconfigurations. The LTC7852 offers a unique feature thatenhances the signal-to-noise ratio of the current sensesignal, allowing the use of inductors with very low DCwinding resistances for maximum efficiency. The controllerachieves a minimum on-time of just 40ns, permitting theuse of high switching frequency at high step-down ratios.8-, 10- or 12 phases with two ICs can be paralleled forvery high current requirements up to 400A.

Eigenschaften

  • Sub-Milliohm DCR Sensing or DrMOS with CurrentSense Improves Efficiency
  • Operates with Power Blocks, DrMOS or External Gate Drivers and MOSFETs
  • ±0.5% Total Output Voltage Accuracy
  • Flexible Phase Configuration
  • Dual Output Current Monitoring
  • tON(MIN) = 40ns, Capable of Very Low Duty Cycles atHigh Frequency
  • Dual Differential Remote Sensing Amplifiers
  • Programmable Frequency Range of 250kHz to 1.2MHz
  • VIN Range Is Not Limited by IC
  • VCC Range: 4.5V to 5.5V
  • VOUT Range: 0.5V to 2.0V
  • 48 Lead (5mm × 6mm) GQFN for LTC7852
  • 36 Lead (4mm × 5mm) QFN for LTC7852-1Sub-Milliohm DCR Sensing or DrMOS with CurrentSense Improves Efficiencynn Operates with Power Blocks, DrMOS or ExternalGate Drivers and MOSFETsnn ±0.5% Total Output Voltage Accuracynn Flexible Phase Configurationnn Dual Output Current Monitoringnn tON(MIN) = 40ns, Capable of Very Low Duty Cycles atHigh Frequency

Typische Anwendungen

  • Computer Systems
  • DC Power Distribution Systems
  • Telecom and Datacom Systems

Weiterführende Informationen

Artikeldaten

Artikel Nr.
Daten­blatt
Simu­lation
Downloads
Status
Produktserie
L(nH)
LR(nH)
IR(A)
ISAT,10%(A)
ISAT,30%(A)
RDC(mΩ)
fres(MHz)
Material
Muster
WE-HCM SMT-Hochstrominduktivität, 250 nH, 250 nH
Simu­lation
Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre.
Induktivität250 nH
Nenninduktivität250 nH
Nennstrom38 A
Sättigungsstrom 154.4 A
Sättigungsstrom @ 30%64.7 A
Gleichstromwiderstand0.32 mΩ
Eigenresonanzfrequenz33 MHz
MaterialMnZn