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Details
| Topologie | Abwärts- und Aufwärtswandler |
| Eingangsspannung | 7-72 V |
| Schaltfrequenz | 50-900 kHz |
| Ausgang 1 | -48 V / 2 A |
Beschreibung
The LTC®3896 is a high performance inverting DC/DCswitching regulator controller that drives an all N-channelsynchronous power MOSFET stage. It converts a widerangingpositive input voltage source to a regulated negativeoutput that can be as much as 60V below ground. Theinput can operate from a voltage as low as 4V and as highas 140V – |VOUT–|.The LTC3896 contains tru
Eigenschaften
Wide VIN + |VOUT–| Range: 4V to 140V (150V Abs Max)nn Wide Output Voltage Range: –60V to –0.8Vnn Ground-Referenced Control / Interface Pinsnn Adjustable Gate Drive Level 5V to 10V (OPTI-DRIVE)nn Integrated Bootstrap Diodenn Low Operating IQ: 40μA (Shutdown = 10μA)nn Selectable Gate Drive UVLO Thresholdsnn Onboard LDO or External NMOS LDO for DRVCCnn EXTVCC LDO Powers Drivers from Outputnn Phase-Lockable Frequency (75kHz to 850kHz)nn Programmable Fixed Frequency (50kHz to 900kHz)nn Selectable Continuous, Pulse-Skipping or Low RippleBurst Mode® Operation at Light Loadsnn Adjustable Burst Clamp and Current Limitnn Power Good Output Voltage Monitornn Programmable Input Overvoltage Lockoutnn 38-Lead TSSOP High Voltage Package
Typische Anwendungen
- Telecommunications Power Supplies
- Distributed Power Systems
- Automotive and Industrial Power Systems
Weiterführende Informationen
Artikeldaten
Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | L(µH) | IRP,40K(A) | ISAT,10%(A) | ISAT,30%(A) | RDC max.(mΩ) | fres(MHz) | Drahttype | Muster | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | WE-HCF SMT-Hochstrominduktivität, 10 µH, 16.15 A | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-HCF SMT-Hochstrominduktivität | Induktivität10 µH | Performance Nennstrom16.15 A | Sättigungsstrom 122 A | Sättigungsstrom @ 30%23 A | Gleichstromwiderstand8.76 mΩ | Eigenresonanzfrequenz13 MHz | DrahttypeFlach | ||||
| WE-HCF SMT-Hochstrominduktivität, 22 µH, 34.95 A | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-HCF SMT-Hochstrominduktivität | Induktivität22 µH | Performance Nennstrom34.95 A | Sättigungsstrom 115.5 A | Sättigungsstrom @ 30%18 A | Gleichstromwiderstand2.64 mΩ | Eigenresonanzfrequenz9 MHz | DrahttypeFlach | ||||
| WE-HCF SMT-Hochstrominduktivität, 47 µH, 12.8 A | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-HCF SMT-Hochstrominduktivität | Induktivität47 µH | Performance Nennstrom12.8 A | Sättigungsstrom 17.5 A | Sättigungsstrom @ 30%8.5 A | Gleichstromwiderstand13.42 mΩ | Eigenresonanzfrequenz10 MHz | DrahttypeFlach |