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Details
| Topologie | Abwärtswandler |
| Eingangsspannung | 2.25-5.5 V |
| Schaltfrequenz | 1000-3000 kHz |
| Ausgang 1 | 1.2 V / 6 A |
| Ausgang 2 | 1.8 V / 6 A |
Beschreibung
The LTC®3312SA features dual monolithic synchronous 6A step-down converters in a 4mm × 3mm package for space saving applications with demanding performancerequirements. Using a constant frequency, peak current mode architecture at switching frequencies up to 3MHz, both bucks achieve high efficiency and fast transient response with small external components. The LTC3312SA can also be configured as a single output,2-phase 12A step-down converter.
Eigenschaften
- Dual 6A Outputs
- Configurable as Single Output, 2-Phase 12A Buck
- High Efficiency: 12mΩ High-Side and 8mΩ Low-Side
- ±1% Maximum Total DC Output Error
- Wide Bandwidth, Fast Transient Response
- Internal Input Capacitors Reduce EMI
- VIN Range: 2.25V to 5.5V
- VOUT Range: 0.5V to VIN
- Programmable Frequency to 3MHz
- Low Ripple Burst Mode® Operation with Low IQ
- Shutdown Current: 1.4μA
- 35ns Minimum On-Time
- Internal Compensation
- Precision Enable, Power Good for Power Sequencing
- Tracking, Programmable Soft-Start, Temp Monitor Output
- Thermally Enhanced, 22-Lead 4mm × 3mm ×0.95mm LQFN package
- AEC-Q100 Qualified for Automotive
Typische Anwendungen
- Communications, Servers, Telecom Power Supplies, Optical Networking
- FPGA, ASIC, μP Core Supplies
- Industrial, Distributed DC Power Systems (POL)
- Automotive
Weiterführende Informationen
Artikeldaten
Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | L(µH) | IR(A) | ISAT1(A) | ISAT2(A) | RDC max.(mΩ) | fres(MHz) | IRP,40K(A) | ISAT,30%(A) | RDC typ.(mΩ) | VOP(V) | Montageart | Muster | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | WE-PMCI Power Molded Chip Induktivität, 0.25 µH, 9.05 A | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-PMCI Power Molded Chip Induktivität | Induktivität0.25 µH | Nennstrom9.05 A | Sättigungsstrom 18.5 A | Sättigungsstrom 215.65 A | Gleichstromwiderstand31 mΩ | Eigenresonanzfrequenz150 MHz | Performance Nennstrom9.05 A | Sättigungsstrom @ 30%15.65 A | Gleichstromwiderstand26 mΩ | – | MontageartSMT | ||||
 | WE-MAPI SMT-Speicherdrossel, 0.33 µH, 5.5 A | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-MAPI SMT-Speicherdrossel | Induktivität0.33 µH | Nennstrom5.5 A | – | – | Gleichstromwiderstand17 mΩ | Eigenresonanzfrequenz140 MHz | Performance Nennstrom8.7 A | Sättigungsstrom @ 30%10.5 A | Gleichstromwiderstand14 mΩ | Betriebsspannung80 V | MontageartSMT |