IC-Hersteller Analog Devices
IC-Hersteller (103)
- Alle Hersteller
Analog Devices
Infineon Technologies
Microchip
Onsemi
Renesas
ROHM
STMicroelectronics
Texas Instruments
- 3peak incorporated (28)
- Ablic (23)
- Acco Semiconductor (1)
- Advanced Power (4)
- Allegro Microsystems (100)
- Alpha & Omega Semiconductor (37)
- AnalogySemi (3)
- AnDAPT Inc (204)
- Anpec (13)
- AXElite (2)
- Backward (6)
- Bright Power Semiconductor (1)
- Broadcom (46)
- Cambridge GaN Devices (18)
- Chipanalog Micro (10)
- Cologne Chips (1)
- Convenient Power (1)
- Dialog Semiconductor (12)
- Diodes Incorporated (259)
- Divimath (8)
- Elmos AG (1)
- EPC (140)
- e-Peas Semiconductors (1)
- Eta Solutions Co. Ltd. (9)
- GaN Systems (8)
- GaNPower (3)
- Giantec (1)
- Gstek Wuxi (1)
- Helix Semiconductor (7)
- IKON (1)
- Indie Semiconductor (8)
- Innovision Semiconductor Inc (2)
- Intel (68)
- Inventchip Technology (3)
- ISSI (51)
- JoulWatt (20)
- KDPOF (3)
- Kinetic Technology (8)
- Lattice semiconductor Corporation (38)
- Littelfuse (1)
- Lumissil Microsystems (8)
- M3 Technology (M3Tek) (7)
- Macnica (22)
- Marvell Semiconductor (1)
- MaxLinear (181)
- Menlo Micro (1)
- MikroE (25)
- MindCet (2)
- Monolithic Power Systems (980)
- Navitas Semiconductor Inc (6)
- NewEdge Technologies, Inc. (1)
- Nexperia (267)
- Nisshinbo Micro Device Inc. (10)
- Novosense Micro (1)
- NXP (337)
- O2 Micro International Ltd (10)
- On Bright (7)
- Panasonic (2)
- PN Junction Semiconductor (2)
- Power Integrations (117)
- Powermat (1)
- Pulsiv (19)
- Qorvo (97)
- Realsil SuRealsil(tek) Microelectronics (1)
- Richtek (297)
- Sanken Electric Co., Ltd. (16)
- Sckipio (6)
- Semtech (86)
- SG-Micro (58)
- SiFive (2)
- Silanna Semiconductor (9)
- Silergy Corporation (33)
- Silicon Laboratory Inc. (108)
- Silicontent Technology (59)
- Silvertel (59)
- Skycore Semiconductors (1)
- Skyworks (33)
- Southchip (14)
- Summit Wireless (1)
- Tagore Tech (7)
- Taiwan Semiconductor (1)
- TDK Corporation (1)
- Tempo Semiconductor (1)
- Torex (37)
- Toshiba (25)
- Transphorm (21)
- TransSIP (2)
- Union (21)
- uPI Semiconductor (2)
- Valens Semiconductor (31)
- Wise Integration (3)
- Wolfspeed (23)
- Xilinx (22)
- XL Semiconductor (3)
- XYSemi (62)
Details
| Topologie | Abwärtswandler |
| Eingangsspannung | 3-42 V |
| IC-Revision | B |
Beschreibung
The LT®8603 is a highly flexible, quad output regulator combining two high input voltage capable monolithic step-down switching regulators, one low input voltage capable monolithic step-down regulator, and a boost controller to satisfy a wide range of applications while occupying minimal board space.With the boost controller configured to supply the chip VIN supply, the LT8603 produces three precisely regulated outputs even when the boost input voltage falls significantly below the regulated output voltages, such as during an automotive cold crank scenario. Alternatively, with the boost controller driven from one of the step-down regulator outputs or configured as a SEPIC, the LT8603 provides four precisely regulated outputs over a wide input voltage range.The LT8603 provides robust regulation by including a cycle-by-cycle current limit for all step-down regulators, thermal shutdown, and a boost controller that can tolerate reverse battery connections and negative transient input voltages down to –42V.
Eigenschaften
- Flexible Power Supply System Capable of Four Regulated Outputs with VBATT << VOUT
- Two High Voltage Synchronous Buck Regulators
- 3V to 42V Input Voltage Range
- Output Currents Up to 2.5A and 1.5A
- One Low Voltage Synchronous Buck Regulator
- 2.6V to 5.5V Input Voltage Range
- Output Currents Up to 1.8A
- One Boost Controller Allows Buck Converters to Regulate with VBATT << VOUT
- Selectable Burst Mode® Operation Allows Low 28µA IQ with High Voltage Channels Active
- Programmable Power-On Reset
- Individual Channel Power Good Indicators
- Step-Down Switching Frequency: 250kHz to 2.2MHz
- Available in 40-Lead QFN (6mm × 6mm) Package
- AEC-Q100 Qualified for Automotive Applications
Typische Anwendungen
- Industrial Controls and Power Supplies
- Automotive Stop-Start and Cold Crank Ride Through
Weiterführende Informationen
Artikeldaten
Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | L(µH) | IRP,40K(A) | ISAT,10%(A) | ISAT,30%(A) | RDC max.(mΩ) | fres(MHz) | Montageart | L1(µH) | L2(µH) | n | IR 1(A) | IR 2(A) | ISAT1(A) | ISAT2(A) | RDC 1(mΩ) | RDC 2(mΩ) | Muster | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | WE-LHMI SMT Speicherdrossel, 1 µH, 4.5 A | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-LHMI SMT Speicherdrossel | Induktivität1 µH | Performance Nennstrom4.5 A | Sättigungsstrom 15.65 A | Sättigungsstrom @ 30%10 A | Gleichstromwiderstand47 mΩ | Eigenresonanzfrequenz90 MHz | MontageartSMT | – | – | – | – | – | – | – | – | – | ||||
| WE-LHMI SMT Speicherdrossel, 1 µH, 6.2 A | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-LHMI SMT Speicherdrossel | Induktivität1 µH | Performance Nennstrom6.2 A | Sättigungsstrom 16.5 A | Sättigungsstrom @ 30%12.5 A | Gleichstromwiderstand27 mΩ | Eigenresonanzfrequenz89 MHz | MontageartSMT | – | – | – | – | – | – | – | – | – | ||||
| WE-LHMI SMT Speicherdrossel, 1.5 µH, 7.8 A | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-LHMI SMT Speicherdrossel | Induktivität1.5 µH | Performance Nennstrom7.8 A | Sättigungsstrom 17.7 A | Sättigungsstrom @ 30%14.2 A | Gleichstromwiderstand25 mΩ | Eigenresonanzfrequenz45 MHz | MontageartSMT | – | – | – | – | – | – | – | – | – | ||||
| WE-LHMI SMT Speicherdrossel, 2.2 µH, 4.05 A | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-LHMI SMT Speicherdrossel | Induktivität2.2 µH | Performance Nennstrom4.05 A | Sättigungsstrom 14.45 A | Sättigungsstrom @ 30%8.4 A | Gleichstromwiderstand61 mΩ | Eigenresonanzfrequenz49 MHz | MontageartSMT | – | – | – | – | – | – | – | – | – | ||||
 | WE-CFWI Gekoppelte Flachdraht Doppeldrossel, 2.2 µH, – | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-CFWI Gekoppelte Flachdraht Doppeldrossel | Induktivität2.2 µH | – | – | – | – | – | – | Induktivität 12.2 µH | Induktivität 22.2 µH | Übersetzungsverhältnis1:1 | Nennstrom 118 A | Nennstrom 218 A | Sättigungsstrom 135 A | Sättigungsstrom 235 A | Gleichstromwiderstand 14.2 mΩ | Gleichstromwiderstand 24.2 mΩ | ||||
| WE-LHMI SMT Speicherdrossel, 3.3 µH, 5.45 A | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-LHMI SMT Speicherdrossel | Induktivität3.3 µH | Performance Nennstrom5.45 A | Sättigungsstrom 15.55 A | Sättigungsstrom @ 30%10.9 A | Gleichstromwiderstand38 mΩ | Eigenresonanzfrequenz27 MHz | MontageartSMT | – | – | – | – | – | – | – | – | – | ||||
| WE-LHMI SMT Speicherdrossel, 5.6 µH, 2.6 A | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-LHMI SMT Speicherdrossel | Induktivität5.6 µH | Performance Nennstrom2.6 A | Sättigungsstrom 12.4 A | Sättigungsstrom @ 30%5.1 A | Gleichstromwiderstand125 mΩ | Eigenresonanzfrequenz30 MHz | MontageartSMT | – | – | – | – | – | – | – | – | – | ||||
| WE-LHMI SMT Speicherdrossel, 22 µH, 2.5 A | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-LHMI SMT Speicherdrossel | Induktivität22 µH | Performance Nennstrom2.5 A | Sättigungsstrom 12.75 A | Sättigungsstrom @ 30%5.95 A | Gleichstromwiderstand190 mΩ | Eigenresonanzfrequenz10 MHz | MontageartSMT | – | – | – | – | – | – | – | – | – |