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Details
| Topologie | Gegentaktwandler (Halbbrücken) |
| Eingangsspannung | 10.5-13.2 V |
Typische Anwendungen
Weiterführende Informationen
Artikeldaten
Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | L(µH) | IRP,40K(A) | ISAT,10%(A) | ISAT,30%(A) | RDC max.(mΩ) | fres(MHz) | Drahttype | Muster | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | WE-HCF SMT-Hochstrominduktivität, 470 µH, 5.2 A | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-HCF SMT-Hochstrominduktivität | Induktivität470 µH | Performance Nennstrom5.2 A | Sättigungsstrom 13.2 A | Sättigungsstrom @ 30%3.7 A | Gleichstromwiderstand91.8 mΩ | Eigenresonanzfrequenz1.7 MHz | DrahttypeRund |