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Details
| Topologie | Sonstige Topologie |
| IC-Revision | 1 |
Eigenschaften
remarks: only BOM available
Artikeldaten
Artikel Nr. | Datenblatt | Simulation | Downloads | Status | Produktserie | L(µH) | ISAT,10%(A) | ISAT,30%(A) | IR,40K(A) | IRP,40K(A) | RDC max.(mΩ) | fres(MHz) | Bauform | Version | Muster | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | WE-PD Speicherdrossel, 47 µH, 4.5 A | Status Aktivi| Produktion ist aktiv. Erwartete Lebenszeit: >10 Jahre. | ProduktserieWE-PD Speicherdrossel | Induktivität47 µH | Sättigungsstrom 14.5 A | Sättigungsstrom @ 30%5.5 A | Nennstrom3.8 A | Performance Nennstrom4.9 A | Gleichstromwiderstand60 mΩ | Eigenresonanzfrequenz6.5 MHz | Bauform1210 | VersionGestanzt |