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WE-AGDT Auxiliary Gate Drive Transformer

for SiC-MOSFET and IGBT

Size Dimen­sions 3DL
(mm)
W
(mm)
H
(mm)
Mount
EP7 11.3 10.95 11.94 SMT

Characteristics

  • Interwinding capacitance down to 6.8 pF
  • Tiny surface mount EP7 package
  • Dielectric insulation up to 4 kV AC
  • Basic insulation
  • Safety: IEC62368-1 / IEC61558-2-16
  • Common control voltages for SiC MOSFET’s
  • Flyback with primary side regulation
  • Wide range input voltages 9 V to 36 V
  • High efficiency and very compact solution
  • Reference designs with Analog Devices and Texas Instruments
  • Operating temperature: -40 °C up to +130 °C

Applications

  • Industrial drives
  • AC motor inverters
  • HEV/EV charging station
  • Battery chargers
  • Solar inverters
  • Data centers
  • Uninterruptible power supplies
  • Active power factor correction
  • SiC-MOSFET based power converter

Products

EP7
Order Code Data­sheet Simu­lation DownloadsVIN
(V)
VOut1
(V)
VOut2
(V)
PO
(W)
CWW 1
(pF)
L
(µH)
ISAT
(A)
fswitch
(kHz)
nIC ReferenceIC Reference Samples
750318131SPEC
8 files 9 - 18 15 -4 6 7.5 7 5 350 2.25:3.5:1 LT8302ADI Power by Linear
750318114SPEC
8 files 9 - 18 19 6 6.8 6 6.2 350 1:2 LT8302ADI Power by Linear
750317894SPEC
8 files 9 - 18 15 -4 3 7 18 1.6 350 2.25:3.5:1 LM5180Texas Instruments
750317893SPEC
8 files 9 - 18 19 3 6.8 18 1.95 350 1:2 LM5180Texas Instruments
750318208SPEC
8 files 18 - 36 15 -4 5 7 27 1.5 350 3.5:3.5:1 LM5180Texas Instruments
750318207SPEC
8 files 18 - 36 19 5 8.2 27 2 350 1:1.2 LM5180Texas Instruments
Order Code Data­sheet Simu­lation
750318131SPEC
750318114SPEC
750317894SPEC
750317893SPEC
750318208SPEC
750318207SPEC
Samples
Order Code Data­sheet Simu­lation DownloadsVIN
(V)
VOut1
(V)
VOut2
(V)
PO
(W)
CWW 1
(pF)
L
(µH)
ISAT
(A)
fswitch
(kHz)
nIC ReferenceIC Reference Samples