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Infineon Technologies 1EDI60N12AF

1EDI EiceDRIVER™ Compact Separate output variant for MOSFET

Overview

TopologyPower Factor Correction
Input voltage85-265 V
Switching frequency4000 kHz
Output 1400 V / 6.25 A
IC revision2.0

Description

The 1EDI60N12AF is a galvanically isolated single channel MOSFET driver in a PG-DSO-8-51 package that provides output currents of at least 6 A at separated output pins. The input logic pins operate on a wide input voltage range from 3 V to 15 V using CMOS threshold levels to support even 3.3 V microcontroller. Data transfer across the isolation barrier is realized by the Coreless Transformer Technology. Every driver family member comes with logic input and driver output under voltage lockout (UVLO) and activeshutdown.

Features

  • Single channel isolated MOSFET Driver
  • Input to output isolation voltage up to 1200 V
  • For high voltage power MOSFETs
  • Up to 10 A typical peak current at rail-to-rail outputs
  • Separate source and sink outputs

Typical applications

  • UPS-Systems
  • Solar MPPT boost converter
  • Welding
  • AC and Brushless DC Motor Drives
  • High Voltage PFC, DC/DC-Converter and DC/AC-Inverter
  • Induction Heating Resonant Application

Products

Order Code Data­sheet Downloads Product seriesL1
(µH)
IR 1
(A)
ISAT 1
(A)
RDC1 typ
(Ω)
RDC1 max.
(Ω)
fres 1
(MHz)
IR
(A)
L
(µH)
RDC max.
(Ω)
VR
(V (AC))
VT
(V (AC))
MountSize Samples
74454133
STE ALT EAG CAD LTS PSP SPE IGS CADWE-PD3 SMT Power Inductor 33 1.2 1.8 0.127 0.16 12 1.2 33 0.16 L
744824101
STE ALT EAG CAD LTS PSP IGS CAD SPADesign Kit WE-CMB / WE-ExB / WE-CMBNC Common Mode Power Line Chokes 1000 10 0.007 250 1500 THT L
Order Code Data­sheet
74454133
744824101
Samples
Order Code Data­sheet Downloads Product seriesL1
(µH)
IR 1
(A)
ISAT 1
(A)
RDC1 typ
(Ω)
RDC1 max.
(Ω)
fres 1
(MHz)
IR
(A)
L
(µH)
RDC max.
(Ω)
VR
(V (AC))
VT
(V (AC))
MountSize Samples